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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 5 of 5  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2018-10-17
14:00
Miyagi Niche, Tohoku Univ. [Invited Talk] Fin-FET MONOS for Next Generation Automotive-MCU
Shibun Tsuda, Tomoya Saito, Hirokazu Nagase, Yoshiyuki Kawashima, Atsushi Yoshitomi, Shinobu Okanishi, Tomohiro Hayashi, Takuya Maruyama, Masao Inoue, Seiji Muranaka, Shigeki Kato, Takuya Hagiwara, Hirokazu Saito, Tadashi Yamaguchi, Masaru Kadoshima, Takahiro Maruyama, Tatsuyoshi Mihara, Hiroshi Yanagita, Kenichiro Sonoda, Yasuo Yamaguchi, Tomohiro Yamashita (Renesas) SDM2018-52
 [more] SDM2018-52
pp.1-5
SDM 2018-01-30
14:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Reliability and Scalability of FinFET Split-Gate MONOS Array with Tight Vth Distribution for 16/14nm-node Embedded Flash
Shibun Tsuda, Tomoya Saito, Hirokazu Nagase, Yoshiyuki Kawashima, Atsushi Yoshitomi, Shinobu Okanishi, Tomohiro Hayashi, Takuya Maruyama, Masao Inoue, Seiji Muranaka, Shigeki Kato, Takuya Hagiwara, Hirokazu Saito, Tadashi Yamaguchi, Masaru Kadoshima, Takahiro Maruyama, Tatsuyoshi Mihara, Hiroshi Yanagita, Kenichiro Sonoda, Tomohiro Yamashita, Yasuo Yamaguchi (renesas) SDM2017-94
Reliability and scalability of split-gate metal-oxide nitride oxide silicon (SG-MONOS) are discussed for 16/14nm-node em... [more] SDM2017-94
pp.13-16
SDM 2016-10-26
15:30
Miyagi Niche, Tohoku Univ. [Invited Talk] Back-Bias Control Technique for Suppression of Die-to-Die Delay Variability of SOTB CMOS Circuits at Ultralow-Voltage (0.4 V) Operation
Hideki Makiyama, Yoshiki Yamamoto, Takumi Hasegawa, Shinobu Okanishi, Keiichi Maekawa, Hiroki Shinkawata, Shiro Kamohara, Yasuo Yamaguchi (Renesas Electronics Corp.), Nobuyuki Sugii (Hitach), Koichiro Ishibashi (The Univ. of Electro-Communications), Tomoko Mizutani, Toshiro Hiramoto (The Univ. of Tokyo) SDM2016-71
Small-variability transistors such as silicon on thin buried oxide (SOTB) are effective for reducing the operation volta... [more] SDM2016-71
pp.15-20
SDM 2016-10-26
16:10
Miyagi Niche, Tohoku Univ. [Invited Talk] Ultralow-Voltage Operation of Silicon-on-Thin-BOX (SOTB) 2Mbit SRAM Down to 0.37 V Utilizing Adaptive Back Bias
Yoshiki Yamamoto, Hideki Makiyama, Takumi Hasegawa, Shinobu Okanishi, Keiichi Maekawa, Shinkawata Hiroki, Shiro Kamohara, Yasuo Yamaguchi (Renesas), Nobuyuki Sugii (Hitachi), Tomoko Mizutani, Toshiro Hiramoro (UT) SDM2016-72
We demonstrated record 0.37V minimum operation voltage (VMIN) of 2Mb Silicon-on-Thin-Buried-oxide (SOTB) 6T-SRAM. Thanks... [more] SDM2016-72
pp.21-25
ICD, SDM 2014-08-04
09:00
Hokkaido Hokkaido Univ., Multimedia Education Bldg. [Invited Talk] A Perpetuum Mobile 32bit CPU with 13.4pJ/cycle, 0.14μA Sleep Current using Reverse-Body-Bias Assisted 65nm SOTB CMOS Technology
Koichiro Ishibashi (UEC), Nobuyuki Sugii (LEAP), Kimiyoshi Usami (SIT), Hideharu Amano (KU), Kazutoshi Kobayashi (KIT), Cong-Kha Pham (UEC), Hideki Makiyama, Yoshiki Yamamoto, Hirofumi Shinohara, Toshiaki Iwamatsu, Yasuo Yamaguchi, Hidekazu Oda, Takumi Hasegawa, Shinobu Okanishi, Hiroshi Yanagita (LEAP) SDM2014-62 ICD2014-31
 [more] SDM2014-62 ICD2014-31
pp.1-4
 Results 1 - 5 of 5  /   
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