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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ED 2008-07-09
17:10		 Hokkaido Kaderu２・７ [Invited Talk] A Ta2O5 Solid-electrolyte Switch with Improved Reliability
Naoki Banno, Toshitsugu Sakamoto, Noriyuki Iguchi, Shinji Fujieda (NEC Corp.), Kazuya Terabe, Tsuyoshi Hasegawa, Masakazu Aono (NIMS) ED2008-52 SDM2008-71		 We present a novel solid-electrolyte switch (”NanoBridge”) promising for application to field programmable gate array (F... [more] ED2008-52 SDM2008-71
pp.69-72
SDM 2007-06-08
09:25		 Hiroshima Hiroshima Univ. ( Faculty Club) Effect of Nitrogen Profile and Fluorine Incorporation on Negative-bias Temperature Instability of Ultrathin Plasma-nitrided SiON MOSFETs
Masayuki Terai, Shinji Fujieda (NEC) SDM2007-40		 The effects of plasma nitridation and fluorine incorporation on the components of negative-bias temperature instability ... [more] SDM2007-40
pp.49-54
ICD 2007-04-13
13:50		 Oita   Suppression of lateral charge redistribution using advanced impurity trap memory for improving high temperature retention
Hiroshi Sunamura, Taeko Ikarashi, Ayuka Morioka, Setsu Kotsuji, Makiko Oshida, Nobuyuki Ikarashi, Shinji Fujieda, Hirohito Watanabe (NEC) ICD2007-15		 For retention improvement in scaled SONOS-type non-volatile memory, deep traps with controllable density were formed by ... [more] ICD2007-15
pp.83-88
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