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All Technical Committee Conferences (All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2021-11-11 13:00 |
Online | Online | [Invited Talk]
Prospects of HfZrO2-based FeFETs for Ultra-low Power Memory, Logic and AI Applications Shinichi Takagi, Kasidit Toprasertpong, Xuan Luo, Eishin Nako, Zeyu Wang, Tsung-En Lee, Kento Tahara, Mitsuru Takenaka, Ryosho Nakane (U. Tokyo)  SDM2021-55 |
Since the discovery of ferroelectricity in HfO2-based dielectric films in 2011, FeFETs using HfO2-based thin films as ga... [more] | SDM2021-55 pp.13-18 |
| SDM, ICD, ITE-IST [detail] | 2021-08-18 10:15 |
Online | Online | [Invited Talk]
Voltage-sensing FeFET CiM with MAC by Source-follower Read and Charge-sharing Chihiro Matsui, Kasidit Toprasertpong, Shinichi Takagi, Ken Takeuchi (Univ. Tokyo) SDM2021-37 ICD2021-8 |
An energy-efficient and high-throughput HZO FeFET Computation-in-Memory (CiM) is proposed. The FeFET CiM performs voltag... [more] | SDM2021-37 ICD2021-8 pp.38-41 |
| SDM, ICD, ITE-IST [detail] | 2021-08-18 11:00 |
Online | Online | [Invited Talk]
Demonstration of HfO2-based ferroelectric ultra-thin films with low operating voltage, low process temperature, and high endurance
-- Toward embedded memory in advanced technology nodes -- Kasidit Toprasertpong, Kento Tahara (Univ. Tokyo), Yukinobu Hikosaka, Ko Nakamura, Hitoshi Saito (Fujitsu Semiconductor Memory Solution), Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2021-38 ICD2021-9 |
In this study, we demonstrate the importance of the thickness scaling of Hf0.5Zr0.5O2 thin films for the ferroelectric m... [more] | SDM2021-38 ICD2021-9 pp.42-47 |
| SDM | 2021-06-22 13:50 |
Online | Online | [Memorial Lecture]
Operation mechanism of Si/HZO ferroelectric FETs
-- Role of MOS (MFS) interface -- Kasidit Toprasertpong, Tsung-En Lee, Zaoyang Lin, Kento Tahara, Kouhei Watanabe, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2021-23 |
In this talk, we will introduce our findings on the mechanisms at the MFIS interface and their impacts on the memory cha... [more] | SDM2021-23 pp.7-12 |
| ICD, SDM, ITE-IST [detail] | 2020-08-06 10:15 |
Online | Online | [Invited Talk]
Polarization/charge coupling in Si ferroelectric FET and its impact on memory characteristics Kasidit Toprasertpong, Zaoyang Lin, Tsung-En Lee, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2020-2 ICD2020-2 |
Ferroelectric FETs, where the ferroelectric material is employed as the MOSFET gate insulator, are different from conven... [more] | SDM2020-2 ICD2020-2 pp.3-7 |
| ICD, SDM, ITE-IST [detail] | 2020-08-07 10:15 |
Online | Online | [Invited Talk]
Reservoir Computing using Hf0.5Zr0.5O2/Si FeFETs for Neuromorphic Applications Eishin Nako, Kasidit Toprasertpong, Ryosho Nakane, Zeyu Wang, Yuto Miyatake, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2020-7 ICD2020-7 |
[more] | SDM2020-7 ICD2020-7 pp.31-36 |
| LQE, OPE, CPM, EMD, R | 2019-08-23 09:25 |
Miyagi | [Invited Talk]
Prospect of hybrid optical modulators using III-V membrane Mitsuru Takenaka, Qiang Li, Naoki Sekine, Shinichi Takagi (Univ.Tokyo) R2019-28 EMD2019-26 CPM2019-27 OPE2019-55 LQE2019-33 |
We have achieved extremely-high modulation efficiency using accumulated electrons in a hybrid MOS structure where a III-... [more] | R2019-28 EMD2019-26 CPM2019-27 OPE2019-55 LQE2019-33 pp.43-46 |
|
| SDM, ICD, ITE-IST [detail] | 2019-08-09 10:15 |
Hokkaido | Hokkaido Univ., Graduate School /Faculty of Information Science and | Fabrication and electrical characteristics of amorphous-ZnSnO/Si bilayer tunnel FETs Kimihiko Kato (Univ. of Tokyo/AIST), Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2019-46 ICD2019-11 |
We have examined impact of an amorphous ZnSnO channel layer with high thickness uniformity on electrical characteristics... [more] | SDM2019-46 ICD2019-11 pp.63-66 |
| SDM | 2018-11-08 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Proposal and device design of tunneling field effect transistor with oxide semiconductor and group-IV semiconductor Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2018-66 |
A novel bilayer tunneling field effect transistor (TFET) employing an attractive material combination of oxide-semicondu... [more] | SDM2018-66 pp.11-16 |
| LQE | 2018-07-13 10:40 |
Hokkaido | [Invited Talk]
Perspective of optical modulator using Si hybrid MOS phase shifter Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) LQE2018-31 |
We have proposed a Si hybrid MOS structure where a thin III-V semiconductor membrane is bonded on a Si waveguide with a ... [more] | LQE2018-31 pp.43-46 |
|
| SDM | 2018-01-30 11:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Proposal and demonstration of oxide-semiconductor/(Si, SiGe, Ge) bilayer tunneling field effect transistor with type-II energy band alignment Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2017-92 |
A novel bilayer tunneling field effect transistor (TFET) employing an attractive material combination of oxide-semicondu... [more] | SDM2017-92 pp.5-8 |
| SDM | 2017-01-30 10:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Tunneling MOSFET Technologies using III-V/Ge Materials Shinichi Takagi, Daehwan Ahn, Munetaka Noguchi, Takahiro Gotow, Koichi Nishi, Min-Soo Kim, Mitsuru Takenaka (Univ. of Tokyo) SDM2016-131 |
[more] | SDM2016-131 pp.5-8 |
| SDM | 2016-01-28 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Experimental Study on Carrier Transport Properties in Extremely-Thin Body Ge-on-Insulator (GOI) p-MOSFETs with GOI Thickness Down to 2 nm Xiao Yu, Jian Kang, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2015-120 |
[more] | SDM2015-120 pp.1-4 |
| SDM | 2016-01-28 14:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
CMOS photonics technologies based on heterogeneous integration on Si Mitsuru Takenaka, Younghyun Kim, Jaehoon Han, Jian Kan, Yuki Ikku, Yongpeng Cheng, Jinkwon Park, SangHyeon Kim, Shinichi Takagi (Univ. of Tokyo) SDM2015-124 |
In this paper, we present heterogeneous integration of SiGe/Ge and III-V semiconductors on Si for electronic-photonic in... [more] | SDM2015-124 pp.17-20 |
| SDM | 2015-01-27 10:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
High Ion/Ioff Ge-source Ultrathin Body Strained-SOI Tunnel FETs
-- Impact of Channel Strain, MOS Interfaces and Back Gate on the Electrical Properties -- Minsoo Kim, Yuki K. Wakabayashi, Ryosho Nakane, Masafumi Yokoyama, Mitsuru Takenaka, Shinichi Takagi (The Univ. of Tokyo) SDM2014-137 |
High performance operation of Ge-source/strained-Si-channel hetero-junction tunnel FETs is demonstrated. It is found tha... [more] | SDM2014-137 pp.9-12 |
| OPE, LQE | 2014-12-19 14:50 |
Tokyo | Kikai-Shinko-Kaikan, NTT Atsugi R&D center | Thermal resistance improvement and low-resistance lateral PIN junction formation technique on III-V-OI wafers Yuki Ikku, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) OPE2014-146 LQE2014-133 |
III-V CMOS photonics is a platform which enables strong optical confinement to the III-V waveguides by using III-V-on-In... [more] | OPE2014-146 LQE2014-133 pp.37-40 |
| OPE, LQE | 2014-06-20 16:40 |
Tokyo | Small, low-crosstalk optical switches using III-V CMOS photonics platform Yuki Ikku, Masafumi Yokoyama, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) OPE2014-21 LQE2014-26 |
III-V CMOS photonics is a platform which enables strong optical confinement for the III-V waveguides by using III-V on i... [more] | OPE2014-21 LQE2014-26 pp.39-42 |
|
| SDM | 2014-01-29 15:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
High Performance Sub-20-nm-Channel-Length Extremely-Thin Body InAs-on-Insulator Tri-Gate MOSFETs with High Short Channel Effect Immunity and Vth Tunability S. H. Kim, Masafumi Yokoyama, Ryosho Nakane (Univ. of Tokyo), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2013-144 |
[more] | SDM2013-144 pp.39-42 |
| SDM | 2013-06-18 11:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks Chih-Yu Chang, Masafumi Yokoyama, Sang-Hyeon Kim (Univ. of Tokyo), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2013-50 |
Electrical properties of Al2O3 and HfO2/InGaAs metal-oxide-semiconductor (MOS) capacitors with Al, Au and Pd gate electr... [more] | SDM2013-50 pp.33-37 |
| SDM, ED (Workshop) |
2012-06-29 09:15 |
Okinawa | Okinawa Seinen-kaikan | [Invited Talk]
III-V/Ge integration on Si platform for electronic-photonic integrated circuits Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) |
We have investigated heterogeneous integration of III-Vs and Ge on the Si platform for electronics and photonics. Owing ... [more] | |
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