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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, LQE, CPM |
2009-11-20 15:00 |
Tokushima |
Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
50 W at 5 GHz RF output power performance of GaN-HEMT on Si substrate Shinichi Hoshi, Masanori Itoh, Toshiharu Marui, Hideyuki Okita, Yoshiaki Morino, Isao Tamai, Fumihiko Toda, Shohei Seki (Oki Electric Industry Co., Ltd.), Takashi Egawa (Nagoya Inst. of Tech.) ED2009-157 CPM2009-131 LQE2009-136 |
We have fabricated high RF power output devices using GaN-HEMT on Si substrate, that can be screened out by Hg probe C-V... [more] |
ED2009-157 CPM2009-131 LQE2009-136 pp.139-144 |
ED |
2009-06-12 11:00 |
Tokyo |
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Electric characteristics of recessed gate MIS-AlGaN/GaN-HEMT with a thermal CVD SiN gate insulator film. Toshiharu Marui, Shinichi Hoshi, Fumihiko Toda, Yoshiaki Morino, Masanori Itoh, Hideyuki Okita, Isao Tamai, Shohei Seki (Oki Electric Industry Co.,Ltd.) ED2009-47 |
Normally-off characteristics are needed from the viewpoint of safety when AlGaN/GaN-HEMT applies for the high power swit... [more] |
ED2009-47 pp.57-62 |
MW, ED |
2009-01-15 11:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
Low Loss Coplanar Waveguide Structure on High-Resistivity Silicon Substrate Takehiko Makita, Isao Tamai, Shinichi Hoshi, Shohei Seki (Oki Electric Industry Co., Ltd.) ED2008-209 MW2008-174 |
We have fabricated and evaluated attenuation characteristics of coplanar waveguide (CPW) on high-resisitivity silicon su... [more] |
ED2008-209 MW2008-174 pp.65-70 |
SDM, ED |
2008-07-11 14:50 |
Hokkaido |
Kaderu2・7 |
AlGaN/GaN-HEMTs on SiC with SiN Passivation Film Grown by Thermal CVD Hideyuki Okita, Shinichi Hoshi, Toshiharu Marui, Masanori Itoh, Fumihiko Toda, Yoshiaki Morino, Isao Tamai, Yoshiaki Sano, Shohei Seki (OKI Electric Industry) ED2008-105 SDM2008-124 |
Current collapse phenomenon is a big obstacle in the AlGaN/GaN high electron mobility transistors (HEMTs), since they ha... [more] |
ED2008-105 SDM2008-124 pp.341-345 |
ED, MW |
2008-01-16 13:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Effects of a thermal CVD SiN passivation film on electrical characteristics of AlGaN/GaN HEMTs Toshiharu Marui, Shinichi Hoshi, Yoshiaki Morino, Masanori Itoh, Isao Tamai, Fumihiko Toda, Hideyuki Okita, Yoshiaki Sano, Shohei Seki (OKI) ED2007-208 MW2007-139 |
In AlGaN/GaN HEMTs, we used a thermal CVD SiN surface passivation film for suppressing the current collapse due to AlGaN... [more] |
ED2007-208 MW2007-139 pp.11-15 |
ED, CPM, LQE |
2006-10-05 13:50 |
Kyoto |
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RF characteristics of AlGaN/GaN-HEMTs on Si substrates Hideyuki Okita, Juro Mita, Yoshiaki Sano, Toshiharu Marui, Masanori Itoh, Shinichi Hoshi, Fumihiko Toda, Shohei Seki (Oki), Takashi Egawa (NIT) |
[more] |
ED2006-154 CPM2006-91 LQE2006-58 pp.13-18 |
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