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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 66  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2021-06-22
13:10
Online Online Virtual Meeting [Memorial Lecture] Modification of states of metal copper and copper oxide due to isopropyl alcohol treatment
Takezo Mawaki (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Katsutoshi Ishii (Tokyo Electron Technology Solutions), Yoshinobu Shiba, Tomoyuki Suwa (Tohoku Univ.), Shuji Azumo, Akira Shimizu, Kota Umezawa (Tokyo Electron Technology Solutions), Rihito Kuroda, Yasuyuki Shirai, Shigetoshi Sugawa (Tohoku Univ.)
(To be available after the conference date) [more]
SDM 2020-10-22
10:50
Online Online High capacitance density high breakdown voltage textured deep trench SiN capacitors toward 3D integration
Koga Saito, Ayano Yoshida, Rihito Kuroda (Tohoku Univ.), Hiroshi Shibata, Taku Shibaguchi, Naoya kuriyama (LAPIS Semiconductor Miyagi), Shigetoshi Sugawa (Tohoku Univ.) SDM2020-15
High capacitance density and High breakdown voltage textured deep trench SiN capacitors are presented. The developed cap... [more] SDM2020-15
pp.7-11
SDM 2020-10-22
14:50
Online Online Modification of states of copper and copper oxide due to IPA treatment
Takezo Mawaki (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Katsutoshi Ishii (Tokyo Electron Technology Solutions), Yoshinobu Shiba, Tomoyuki Suwa (Tohoku Univ.), Shuji Azumo, Akira Shimizu, Kota Umezawa (Tokyo Electron Technology Solutions), Rihito Kuroda, Yasuyuki Shirai, Shigetoshi Sugawa (Tohoku Univ.) SDM2020-19
The reduction of copper oxide by isopropyl alcohol (IPA) gas and its mechanism were investigated toward the selective pr... [more] SDM2020-19
pp.25-29
SDM 2020-10-22
15:50
Online Online Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis
Ryo Akimoto, Rihito Kuroda (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Takezo Mawaki, Shinya Ichino, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) SDM2020-21
In this work, temporal noise characteristics of 11520 MOSFETs were measured for each of rectangular and trapezoidal shap... [more] SDM2020-21
pp.34-39
SDM 2019-10-24
15:10
Miyagi Niche, Tohoku Univ. Resistance Measurement Platform for Statistical Evaluation of Emerging Memory Materials with High Accuracy
Takeru Maeda, Yuya Omura, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) SDM2019-65
A high precision 1 Ω – 10 MΩ range resistance measurement platform is presented. The developed platform excludes on-resi... [more] SDM2019-65
pp.59-64
SDM 2019-10-24
15:40
Miyagi Niche, Tohoku Univ. Gas concentration distribution measurement in semiconductor process chamber using a high SNR CMOS absorption image sensor
Keigo Takahashi, Yhang Ricardo Sipauba Carvalho da Silva, Rihito Kuroda, Yasuyuki Fujihara, Maasa Murata, Hidekazu Ishii, Tatsuo Morimoto, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa (Tohoku Univ.) SDM2019-66
This paper reports on gas concentration imaging using lateral overflow integration trench capacitor(LOFITreC) CMOS absor... [more] SDM2019-66
pp.65-68
SDM 2019-10-24
16:10
Miyagi Niche, Tohoku Univ. Observation of Fluctuation of Magnetron Sputtering Plasmas Using High-speed Video Camera
Shintaro Yamazaki, Tetsuya Goto, Manabu Suzuki, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.) SDM2019-67
 [more] SDM2019-67
pp.69-72
SDM 2018-10-18
14:00
Miyagi Niche, Tohoku Univ. Statistical Analysis of Electric Characteristics Variability Using MOSFETs with Asymmetric Source and Drain
Shinya Ichino, Akinobu Teramoto, Rihito Kuroda, Takezo Mawaki, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) SDM2018-62
In this paper, a statistical analysis of electric characteristics variabilities such as threshold voltage variability an... [more] SDM2018-62
pp.51-56
SDM 2017-10-25
14:50
Miyagi Niche, Tohoku Univ. Experimental Investigation of Localized Stress Induced Leakage Current Distribution and its Decrease by Atomically Flattening Process
Hyeonwoo Park, Rihito Kuroda, Tetsuya Goto, Tomoyuki Suwa, Akinobu Teramoto, Daiki Kimoto, Shigetoshi Sugawa (Tohoku Univ) SDM2017-51
Stress Induced Leakage Current (SILC) distributions of a large number of small nMOS transistors with different gate size... [more] SDM2017-51
pp.9-14
SDM 2017-10-26
10:20
Miyagi Niche, Tohoku Univ. A High Sensitivity Realtime Compact Gas Concentration Sensor using UV absorption spectroscopy and Charge Amplifier Circuit
Hidekazu Ishii (Tohoku Univ.), Masaaki Nagase, Nobukazu Ikeda (Fujikin Inc.), Yoshinobu Shiba, Yasuyuki Shirai, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.) SDM2017-56
Metal organic (MO) gases are used in electronic device manufacturing processes such as semiconductors, power devices, LE... [more] SDM2017-56
pp.35-38
SDM 2017-10-26
14:00
Miyagi Niche, Tohoku Univ. Analysis of Random Telegraph Noise Behaviors toward Changes of Source Follower Transistor Operation Conditions using High Accuracy Array Test Circuit
Shinya Ichino, Takezo Mawaki, Akinobu Teramoto, Rihito Kuroda, Shunichi Wakashima, Shigetoshi Sugawa (Tohoku Univ.) SDM2017-60
Behaviors of random telegraph noise (RTN) occurs at CMOS image sensors’ in-pixel source follower transistors (SF) toward... [more] SDM2017-60
pp.57-62
SDM 2016-10-26
14:50
Miyagi Niche, Tohoku Univ. Formation technology of Flat Surface after Selective Epitaxial Growth on Ion-Implanted (100) Oriented Thin SOI Wafers
Kiichi Furukawa, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Keiichi Hashimoto, Shigetoshi Sugawa (Tohoku Univ.), Daisuke Suzuki, Yoichiro Chiba, Katsutoshi Ishii, Akira Shimizu, Kazuhide Hasebe (Tokyo Electron Tohoku) SDM2016-70
 [more] SDM2016-70
pp.9-14
SDM 2016-10-27
10:00
Miyagi Niche, Tohoku Univ. Effects of the oxidizing species on the interface of Al2O3 film by atomic layer deposition
Masaya Saito, Tomoyuki Suwa, Akinobu Teramoto, Rihito Kuroda, Yasumasa Koda, Hisaya Sugita, Hidekazu Ishii, Yoshinobu Shiba, Yasuyuki Shirai, Shigetoshi Sugawa (Tohoku univ.), Marie Hayashi, Junichi Tsuchimoto (CANON ANELVA) SDM2016-73
Al2O3 is a prospective high-dielectric material for the gate insulator film of the power devices and MIM (Metal-Insulato... [more] SDM2016-73
pp.27-30
SDM 2016-10-27
10:50
Miyagi Niche, Tohoku Univ. Behavior of Random Telegraph Noise toward Bias Voltage Changing
Takezo Mawaki, Akinobu Teramoto, Rihito Kuroda, Shinya Ichino, Tetsuya Goto, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) SDM2016-75
As the progression of MOSFETs scaling down continues, the impacts of RTN (Random Telegraph Noise) on the MOSFETs have be... [more] SDM2016-75
pp.35-38
EID, SDM 2015-12-14
11:00
Kyoto Ryukoku University, Avanti Kyoto Hall Fabrication of FinFET Structure with High Selectivity Etching Using Newly Developed SiNx Etch Gas
Takashi Kojiri (Tohoku Univ./ZEON), Tomoyuki Suwa, Keiichi Hashimoto, Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.) EID2015-9 SDM2015-92
We evaluated the properties of newly developed SiNx etch gas (SSY525). The gas indicated high selectivity as 30 ~ 60 for... [more] EID2015-9 SDM2015-92
pp.1-4
SDM 2015-10-29
15:20
Miyagi Niche, Tohoku Univ. Ultra-Low Temperature Flattening Technique of Silicon Surface Using Xe/H2 Plasma
Tomoyuki Suwa, Akinobu Teramoto, Tetsuya Goto, Masaki Hirayama, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2015-73
In order to flatten any crystal orientation of Si surface including Si-fin-structure and to introduce the flattening pro... [more] SDM2015-73
pp.13-16
SDM 2015-10-29
16:00
Miyagi Niche, Tohoku Univ. Electrical Properties of MOSFETs Introducing Atomically Flat Gate Insulator/Silicon Interface
Tetsuya Goto, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa (Tohoku Univ.), Yutaka Kamata, Yuki Kumagai, Katsuhiko Shibusawa (LAPIS Semi. Miyagi) SDM2015-74
Atomically flattening technology was introduced to the widely-used complementary metal oxide silicon (CMOS) process empl... [more] SDM2015-74
pp.17-22
SDM 2015-10-30
10:20
Miyagi Niche, Tohoku Univ. A Device Simulation Study on Tunneling and Diffusion Current Hybrid MOSFET
Kiichi Furukawa, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Keiichi Hashimoto, Takashi Kojiri, Shigetoshi Sugawa (Tohoku Univ.) SDM2015-77
 [more] SDM2015-77
pp.35-40
SDM 2015-10-30
10:50
Miyagi Niche, Tohoku Univ. Ferroelectric BiFeO3 Formation with Oxigen Radical Treatment
Fuminobu Imaizumi, Tetsuya Goto, Akinobu Teramoto, Shigetoshi Sugawa (Tohoku Univ.) SDM2015-78
Oxygen radical treatment was applied to sputter-deposited BiFeO3 (BFO) thin film which is expected to be used for ferroe... [more] SDM2015-78
pp.41-44
SDM 2015-10-30
14:30
Miyagi Niche, Tohoku Univ. Low Work Function LaB6 Thin Films Prepared by Nitrogen Doped LaB6 Target Sputtering
Hidekazu Ishii (Tohoku Univ), Takahashi Kentarou (Sumitomo Osaka Cement), Tetsuya Goto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ) SDM2015-81
LaB6 thin films were deposited by magnetron sputtering, and their work function was investigated. It was found that the ... [more] SDM2015-81
pp.53-56
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