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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2015-10-29 14:00 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Current situation and challenging for ion implantation technology Yoshiki Nakashima, Nariaki Hamamoto, Shigeki Sakai, Hiroshi Onoda (NIC)  SDM2015-71 |
[more] | SDM2015-71 pp.1-6 |
| ICD | 2010-12-17 10:20 |
Tokyo | RCAST, Univ. of Tokyo | Low Power and Highly Reliable Ferroelectric (Fe)-NAND Flash Memory for Enterprise SSD Teruyoshi Hatanaka, Ryoji Yajima, Shinji Noda (Univ. of Tokyo), Mitsue Takahashi, Shigeki Sakai (AIST), Ken Takeuchi (Univ. of Tokyo) ICD2010-118 |
This paper proposes the techniques for highly reliable ferroelectric(Fe)-NAND flash memory. Fe-NAND has the low program/... [more] | ICD2010-118 pp.113-118 |
| ED | 2010-10-25 13:25 |
Kyoto | Surface state and electron emission property of silicon field emitter arrays treated by trifluoromethane plasma Yasuhito Gotoh, Keisuke Endo, Hiroshi Tsuji (Kyoto Univ.), Junzo Ishikawa (Chubu Univ.), Shigeki Sakai (Nissin Ion Equipment) ED2010-129 |
Surface state of the silicon substrate treated by trifluoromethane plasma was analyzed in order to clarify the origin of... [more] | ED2010-129 pp.7-10 |
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| ICD, SDM | 2010-08-27 09:25 |
Hokkaido | Sapporo Center for Gender Equality | A 1.0V Power Supply, 9.5GByte/sec Write Speed, Single-Cell Self-Boost Program Scheme for Ferroelectric NAND Flash SSD Kousuke Miyaji, Shinji Noda, Teruyoshi Hatanaka (Univ. of Tokyo), Mitsue Takahashi, Shigeki Sakai (AIST), Ken Takeuchi (Univ. of Tokyo) SDM2010-139 ICD2010-54 |
A Single-Cell Self-Boost (SCSB) program scheme is proposed to achieve a 1.0V power supply operation in Ferroelectric (Fe... [more] | SDM2010-139 ICD2010-54 pp.83-88 |
| ICD (Workshop) |
2010-08-16 - 2010-08-18 |
Overseas | Ho Chi Minh City University of Technology | [Invited Talk]
Recent FeFET technological progress for FeCMOS logic and FeNAND flash memory applications Shigeki Sakai, Mitsue Takahashi (AIST) |
Ferroelectric-gate field-effect transistors (FeFETs) and their circuit applications are described. The FeFETs with Pt/Sr... [more] | |
| ICD | 2010-04-22 11:40 |
Kanagawa | Shonan Institute of Tech. | 32% Lower Active Power, 42% Lower Leakage Current Ferroelectric 6T-SRAM with VTH Self-Adjusting Function for 60% Larger Static Noise Margin (SNM) Shuhei Tanakamaru, Teruyoshi Hatanaka, Ryoji Yajima (Univ. of Tokyo), Mitsue Takahashi, Shigeki Sakai (AIST), Ken Takeuchi (Univ. of Tokyo) ICD2010-5 |
A 0.5V 6T-SRAM with ferroelectric (Fe-) FETs is proposed and experimentally demonstrated for the first time. The propose... [more] | ICD2010-5 pp.23-28 |
| ICD | 2010-04-23 09:30 |
Kanagawa | Shonan Institute of Tech. | Ferroelectric (Fe)-NAND Flash Memory with Non-volatile Page Buffer for Data Center Application Enterprise Solid-State Drives (SSD) Teruyoshi Hatanaka, Ryoji Yajima (Univ. of Tokyo), Takeshi Horiuchi, Shouyu Wang, Xizhen Zhang, Mitsue Takahashi, Shigeki Sakai (AIST), Ken Takeuchi (Univ. of Tokyo) ICD2010-11 |
A ferroelectric (Fe)-NAND flash memory with a non-volatile (NV) page buffer is proposed. The data fragmentation in a ran... [more] | ICD2010-11 pp.59-64 |
| ICD, SDM | 2009-07-16 14:25 |
Tokyo | Tokyo Institute of Technology | Ferroelectric(Fe)-NAND Flash Memory with Non-volatile Page Buffer for Data Center Application Enterprise Solid-State Drives (SSD) Ryoji Yajima, Teruyoshi Hatanaka (Univ. of Tokyo), Mitsue Takahashi, Shigeki Sakai (AIST), Ken Takeuchi (Univ. of Tokyo) SDM2009-104 ICD2009-20 |
A ferroelectric (Fe)-NAND flash memory with a non-volatile (NV) page buffer is proposed. The data fragmentation in a ran... [more] | SDM2009-104 ICD2009-20 pp.39-44 |
| ED | 2008-08-05 09:50 |
Shizuoka | Sizuoka Univ. Hamamatsu Campus | Application of silicon field emitter arrays for space charge compensation of low energy ion beam Mitsuaki Takeuchi (Innovation Plaza Kyoto, JST), Yasuhito Gotoh, Hiroshi Tsuji (Kyoto Univ.), Shigeki Sakai (Nissin Ion Equipment), Tsunenobu Kimoto, Junzo Ishikawa (Kyoto Univ.) ED2008-119 |
We demonstrated a space charge compensation by using a surface-carbonized silicon field emitter array(Si:C-FEA). The Si:... [more] | ED2008-119 pp.49-52 |
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