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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2024-01-31
14:05
Tokyo KIT Toranomon Graduate School
(Primary: On-site, Secondary: Online)
[Invited Talk] High Peformance 3D Flash Memory with 3.2Gbps Interface and 205MB/s Program Throughput based on CBA(CMOS Directly Bonded to Array) Technology
Shigeki Kobayashi, , , , , (KIOXIA), , , , , , , , , , , , (KIOXIA) SDM2023-77
 [more] SDM2023-77
pp.13-16
RCS, IT, SIP 2016-01-18
13:40
Osaka Kwansei Gakuin Univ. Osaka Umeda Campus Representation of the extension field using the even irreducible polynomial
Shigeki Kobayashi (Nagano nct), Hiroyuki Ebato, Tatsuo Sugimura (Shinshu Univ.) IT2015-64 SIP2015-78 RCS2015-296
This report discribes an representation of the extension field $mathrm{GF}(q^{2m})$ using the even irreducible polynomia... [more] IT2015-64 SIP2015-78 RCS2015-296
pp.97-100
ISEC 2012-05-18
14:15
Tokyo Kikai-Shinko-Kaikan Bldg. An Approach for Constructing Primitive Polynomials of Degree 2^i over Odd Characteristic Prime Field
Yasuyuki Nogami, Yusuke Takai (Okayama Univ.), Shigeki Kobayashi (Nagano National College of Technology), Tatsuo Sugimura (Shinsyu Univ.), Satoshi Uehara (Kitakyushu City Univ.) ISEC2012-4
This paper considers an approach to obtain primitive polynomials over odd characteristic field $\mathbb{F}_{p}$ for whic... [more] ISEC2012-4
pp.19-24
ICD, SDM 2008-07-17
09:25
Tokyo Kikai-Shinko-Kaikan Bldg. Drain Current Fluctuation in High-k Dielectric p-MOSFETs -- Effects of Single-Hole Capture/Emission by the Traps in High-k Dielectric --
Shigeki Kobayashi, Masumi Saitoh, Ken Uchida (Corporate RDC, Toshiba Corp.) SDM2008-129 ICD2008-39
Random telegraph noise (RTN) in scaled MOSFETs is one of the biggest concerns in the present and future LSIs. However, R... [more] SDM2008-129 ICD2008-39
pp.7-10
SDM 2008-06-09
16:50
Tokyo An401・402, Inst. Indus. Sci., The Univ. of Tokyo Inversion-Layer Capacitance and Low-Field Mobility Characteristics in Si(110) pMOSFETs
Masumi Saitoh, Shigeki Kobayashi, Ken Uchida (Toshiba) SDM2008-46
Basic transport properties of Si (110) pMOSFETs are systematically investigated. Inversion-layer capacitance of (110) p... [more] SDM2008-46
pp.23-27
IT 2005-09-27
15:10
Fukushima Aizu Univ. The Representation of typeII ONB by Self-reciprocal Transformation
Shigeki Kobayashi (Shinshu Univ.), Yasuyuki Nogami (Okayama Univ.), Tatsuo Sugimura (Shinshu Univ.)
This paper make relation of All One Polynomials and Irreducible
Polynomials with TypeIIONB clear, by using polynomial ... [more]
IT2005-55
pp.25-30
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