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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 13 of 13  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2022-06-21
13:00
Aichi Nagoya Univ. VBL3F [Invited Talk] Superiority of counter-doped MOSFET from the viewpoint of oxide/4H-SiC interface property
Shigehisa Shibayama, Takuma Doi, Mitsuo Sakashita, Noriyuki Taoka (Nagoya Univ.), Mitsuaki Shimizu (AIST), Osamu Nakatsuka (Nagoya Univ.) SDM2022-24
To decrease channel resistance of 4H-SiC power MOSFET, there are two important approaches; (1) reducing the interface st... [more] SDM2022-24
pp.1-4
SDM 2022-06-21
13:40
Aichi Nagoya Univ. VBL3F Self-formation of Ge1-xSnx nanodots on insulator for multi-layer Ge1-xSnx quantum dots structure
Kaoru Hashimoto, Shigehisa Shibayama, Koji Asaka, Osamu Nakatsuka (Nagoya Univ.) SDM2022-25
Germanium-tin (Ge1−xSnx) quantum dots (QDs) are promising materials as a light-emitting device for optical wiring techno... [more] SDM2022-25
pp.5-8
SDM 2019-06-21
11:20
Aichi Nagoya Univ. VBL3F Ultra-low resistance contact for n-type Ge1-xSnx with in-situ Sb heavily doping and nickel stanogermanide formation
Jihee Jeon, Akihiro Suzuki, Shigehisa Shibayama, Shigeaki Zaima, Osamu Nakatsuka (Nagoya Univ.) SDM2019-26
Ge1−xSnx is a promising channel material for CMOS transistors because of its higher mobilities of both electron and hole... [more] SDM2019-26
pp.5-9
SDM 2019-06-21
12:00
Aichi Nagoya Univ. VBL3F Mechanism of strain relaxation enhancement by ion implantation method for group-IV semiconductor alloy thin film
Hidetaka Sofue, Masahiro Fukuda, Shigehisa Shibayama (Nagoya Univ.), Shigeaki Zaima (Meijo Univ.), Osamu Nakatsuka, (Nagoya Univ.) SDM2019-28
 [more] SDM2019-28
pp.17-20
SDM 2018-01-30
15:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Sub-nm EOT Ferroelectric HfO2 on p+Ge with Highly Reliable Field Cycling Properties
Xuan Tian, Lun Xu, Shigehisa Shibayama, Tomonori Nishimura, Takeaki Yajima (Univ. of Tokyo), Shinji Migita (AIST), Akira Toriumi (Univ. of Tokyo) SDM2017-96
5-nm-thick ferroelectric Y-doped HfO2 was intensively studied. The thickness dependence of ferroelectric properties indi... [more] SDM2017-96
pp.21-24
SDM 2015-06-19
14:35
Aichi VBL, Nagoya Univ. Control of electrical conduction property at metal/Ge interface by introducing ultra-high Sn content SnxGe1-x/Ge interlayer
Akihiro Suzuki, Shigehisa Shibayama, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-49
In order to realize high-performance Ge-channel CMOS, it is essential to reduce contact resistance at metal/Ge interface... [more] SDM2015-49
pp.57-61
SDM 2015-06-19
14:55
Aichi VBL, Nagoya Univ. Effect of annealing on defects in Ge1-xSnx epitaxial layers
Takanori Asano, Shigehisa Shibayama, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-50
In order to control the carrier concentration in Ge1-xSnx epitaxial layer, it is important to understand and control def... [more] SDM2015-50
pp.63-68
SDM 2013-06-18
09:20
Tokyo Kikai-Shinko-Kaikan Bldg. Formation of Ultra Thin GeO2 Film Using Tetraethoxy-Germanium
Teppei Yoshida, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-45
For realizing three-dimensional Ge channel MOSFET, fabrication of good interface property of high-k/Ge structure, and un... [more] SDM2013-45
pp.7-11
SDM 2013-06-18
09:40
Tokyo Kikai-Shinko-Kaikan Bldg. Clarification of oxidation mechanisms in Al2O3/Ge structure and impact of interface reactions on interface properties
Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-46
Currently, it is reported that the Ge surface oxidation through the thin Al2O3 layer using oxygen plasma (post plasma ox... [more] SDM2013-46
pp.13-18
SDM, ED
(Workshop)
2012-06-28
10:00
Okinawa Okinawa Seinen-kaikan Effects of Light and Air Exposures on Electrical Properties of GeO2/Ge and Al2O3/Ge Gate Stack Structures
Kusumandari, Wakana Takeuchi, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)
Low temperature processes such as plasma process are required for realizing Ge metal-oxide-semiconductor field effect tr... [more]
SDM 2012-06-21
10:55
Aichi VBL, Nagoya Univ. Clarification of Interfacial Reaction Mechanism in O2 Annealing or O radical Process for Al2O3/Ge Structure
Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2012-48
To realize a high performance Ge MOSFET, it is quite important to achieve simultaneously the low interface state density... [more] SDM2012-48
pp.27-32
SDM 2011-07-04
11:40
Aichi VBL, Nagoya Univ. Evaluation of Light Induced Damages in Plasma Process on Electrical Properties of Al2O3/Ge Gate Stack Structure
Kusuman Dari, Wakana Takeuchi, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2011-57
We have investigated the effect of light induced damages on the electrical properties of the Al2O3/Ge gate stack structu... [more] SDM2011-57
pp.41-46
SDM 2011-07-04
13:20
Aichi VBL, Nagoya Univ. Effect of O2 Annealing for Al2O3/Ge Structure on Interfacial Properties
Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2011-59
For realizing the next generation complementary metal-oxide-semiconductor field-effect-transistors (CMOSFETs), High-k/Ge... [more] SDM2011-59
pp.51-56
 Results 1 - 13 of 13  /   
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