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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 8 of 8  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM 2017-02-24
10:50
Hokkaido Centennial Hall, Hokkaido Univ. Fabrication of Zinc Oxide-based Thin Films Transistors by a Solution Process and a Direct Patterning of Oxide Thin Films by a Thermal Nanoimprint Method
Fumiya Kimura, Alhanaki Abdullah, Yi Sun, Shota Sasaki, Koki Nagayama, Masatoshi Koyama, Toshihiko Maemoto, Shigehiko Sasa (OIT) ED2016-132 SDM2016-149
Zinc oxide (ZnO) is transparent semiconductor material in visible light wavelength because it has band gap energy of 3.3... [more] ED2016-132 SDM2016-149
pp.13-16
ED, SDM 2016-03-03
14:00
Hokkaido Centennial Hall, Hokkaido Univ. [Invited Talk] A Recent Development in Thin-Film Device Applications using Oxide Semiconductors
Toshihiko Maemoto, Yi Sun, Souhei Matsuda, Shota Sasaki, Kouhei Ashida, Oliver Kaltstein, Masatoshi Koyama, Kazuto Koike, Mitsuaki Yano, Shigehiko Sasa (Osaka Inst. Tech.) ED2015-121 SDM2015-128
We report on the fabrication and characterization of flexible thin-film-transistors using a transparent zinc oxide (ZnO)... [more] ED2015-121 SDM2015-128
pp.1-6
ED 2015-08-04
11:30
Tokyo Kikai-Shinko-Kaikan Bldg. Direct thermal-type gas sensor by P-type MgCr2O4-TiO2 ceramics
Jiro Terada, Sigeru Omatsu, Shigehiko Sasa, Mitsuaki Yano (O. I. T.) ED2015-52
Using an element of two layers of structure that controlled the TiO2 content of p-type semiconductor of MgCr2O4-TiO2 cer... [more] ED2015-52
pp.41-45
SDM, ED 2013-02-27
16:05
Hokkaido Hokkaido Univ. Rectification in ZnO Self Switching Nano-Diodes toward Flexible Device Applications
Yi Sun, Yuta Kimura, Toshihiko Maemoto, Shigehiko Sasa (Osaka Inst. of Tech.), Seiya Kasai (Hokkaido Univ.) ED2012-133 SDM2012-162
We focus on Self Switching nano-Diodes (SSD) as a application for oxide semiconductors. The SSD is a novel functional na... [more] ED2012-133 SDM2012-162
pp.31-34
ED, MW 2010-01-14
13:00
Tokyo Kikai-Shinko-Kaikan Bldg [Invited Talk] Development of high-performance ZnO-based FETs -- Device applications and microwave performance --
Shigehiko Sasa, Kazuto Koike, Toshihiko Maemoto, Mitsuaki Yano, Masataka Inoue (Osaka Inst. of Tech.) ED2009-184 MW2009-167
Zinc Oxide (ZnO) has various advantages over other wide gap semiconductors. In order to evaluate its material feasibilit... [more] ED2009-184 MW2009-167
pp.55-60
ED, SDM 2008-01-30
15:55
Hokkaido   Nonlinear electron transport properties in InAs/AlGaSb three-terminal ballistic junctions
Masatoshi Koyama, Tatsuya Inoue, Naoki Amano, Kenji Fujiwara, Toshihiko Maemoto, Shigehiko Sasa, Masataka Inoue (Osaka Inst. Tech.) ED2007-242 SDM2007-253
The nonlinear electron transport properties and rectification effects in InAs/AlGaSb ballistic devices are reported. We ... [more] ED2007-242 SDM2007-253
pp.29-32
SDM, ED 2007-02-02
11:05
Hokkaido   Ballistic electron transport properties and rectification effects in InAs/AlGaSb mesoscopic structures
Masatoshi Koyama, Hiroshi Takahashi, Tatsuya Inoue, Toshihiko Maemoto, Shigehiko Sasa, Masataka Inoue (Osaka Inst. Tech.)
 [more] ED2006-252 SDM2006-240
pp.67-71
ED 2006-12-08
13:50
Tokyo Kikai-Shinko-Kaikan Bldg. Fabrication and characterization of Sb-based diode structures for detecting subterahertz waves
Hiroshi Takahashi, Tatsuya Inoue, Toshihiko Maemoto, Shigehiko Sasa, Masataka Inoue (Osaka Inst. of Tech.)
 [more]
 Results 1 - 8 of 8  /   
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