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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, CPM, LQE 2021-11-26
15:20		 Online Online Fabrication and electrical property characterization of AlGaN channel HEMT on AlN template
Ryuichi Mori, Kenjiro Uesugi, Shegeyuki Kuboya, Kanako Shojiki, Hideto Miyake (Mie Univ.) ED2021-33 CPM2021-67 LQE2021-45		 $Al_{0.85}Ga_{0.15}N$/$Al_{0.60}Ga_{0.40}N$ HEMT structures with channel thicknesses of 100–1000 nm were grown on low-di... [more] ED2021-33 CPM2021-67 LQE2021-45
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