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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ICD |
2018-04-20 11:10 |
Tokyo |
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[Invited Talk]
A 512Gb 3b/Cell 3D Flash Memory on a 96-Word-Line-Layer Technology Hiroshi Maejima, Kazushige Kanda, Susumu Fujimura, Teruo Takagiwa, Susumu Ozawa, Jumpei Sato, Yoshihiko Shindo, Manabu Sato, Naoaki Kanagawa, Junji Musha, Satoshi Inoue, Katsuaki Sakurai, Toshifumi Hashimoto (TMC), Hao Nguyen, Ken Cheah, Hiroshi Sugawara, Seungpil Lee (WDC), Toshiki Hisada, Tetsuya Kaneko, Hiroshi Nakamura (TMC) ICD2018-10 |
A 512Gb 3b/cell flash has been developed on a 96-WL-layer BiCS FLASH technology. This work implements three key technolo... [more] |
ICD2018-10 pp.39-44 |
ICD |
2012-04-23 13:20 |
Iwate |
Seion-so, Tsunagi Hot Spring (Iwate) |
[Invited Talk]
128Gb 3-Bit Per Cell NAND Flash Memory on 19nm Technology with 18MB/s Write Rate Teruhiko Kamei, Yan Li, Seungpil Lee, Ken Oowada, Hao Nguyen, Qui Nguyen, Nima Mokhlesi, Cynthia Hsu, Jason Li, Venky Ramachandra, Masaaki Higashitani, Tuan Pham, Mitsuyuki Watanabe (SanDisk), Mitsuaki Honma, Yoshihisa Watanabe (Toshiba) ICD2012-2 |
A 128Gb 8-level NAND flash memory using 19nm CMOS technology has been developed. 128Gb is the largest single-chip capaci... [more] |
ICD2012-2 pp.7-12 |
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