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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2010-12-17
10:20		 Kyoto Kyoto Univ. (Katsura) X-Ray Detectors (Silicon Drift Detectors) using Higher-Resistivity Si -- Simulation Results --
Seigo Kitanoya, Seiji Nishikawa, Hideharu Matsuura (Osaka Electro-Communication Univ.) SDM2010-186		 Several regulations for hazardous substances have been enforced due to the increase of awareness of environmental issues... [more] SDM2010-186
pp.7-12
SDM 2010-12-17
14:10		 Kyoto Kyoto Univ. (Katsura) Effects of Sacrifice Oxidation on Characterization of Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
Seiji Nishikawa, Seigo Kitanoya, Hideharu Matsuura (Osaka Electro-Communication Univ.) SDM2010-194		 To determine the energy levels of intrinsic defects in high-purity semi-insulating 4H-SiC, we apply discharge current tr... [more] SDM2010-194
pp.51-56
SDM 2009-12-04
13:30		 Nara NAIST Simplification of Structures of Si X-ray Detectors (Silicon Drift Detector) -- Evaluation by simulation --
Seigo Kitanoya, Takayuki Miyake, Yukihiro Taniguchi, Hideharu Matsuura (Osaka Electro-Comm Univ.) SDM2009-160		 Several regulations for hazardous substances have been enforced due to the increase of awareness of environmental issues... [more] SDM2009-160
pp.49-54
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