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Committee Date Time Place Paper Title / Authors Abstract Paper #
US 2020-09-28
13:50		 Online Online Fast Scanning Method for Measuring Material Homogeneity using the Line-Focus-Beam Ultrasonic-Material-Characterization System
Yuji Ohashi, Yuui Yokota, Akihiro Yamaji, Masao Yoshino, Shunnsuke Kurosawa, Kei Kamada, Hiroki Sato, Satoshi Toyoda, Takashi Hanada, Akira Yoshikawa (Tohoku Univ.) US2020-34		 We proposed and demonstrated a new method for measuring material homogeneity using fast scanning technique with the line... [more] US2020-34
pp.41-44
SDM 2016-06-29
15:05		 Tokyo Campus Innovation Center Tokyo Effects of ultraviolet irradiation on the band offset of Tantalum nanosheets/SiO2/Si interfaces
Shuhei Hayami, Satoshi Toyoda, Katsutoshi Fukuda (Kyoto Univ.), Hidetaka Sugaya (Panasonic), Masahito Morita, Akiyoshi Nakata, Yoshiharu Uchimoto, Eiichiro Matsubara (Kyoto Univ.) SDM2016-42		 On the basis of material design for ReRAM, the interfacial band offset between insulators and Si substrate is one of the... [more] SDM2016-42
pp.53-58
SDM 2006-06-22
10:30		 Hiroshima Faculty Club, Hiroshima Univ. Analysis of nitrogen depth profile in SiO2/SiN stacks studied by angle-resolved photoemission spectroscopy
Satoshi Toyoda, Jun Okabayashi, Masaharu Oshima (Tokyo Univ.), Guo-Lin Liu, Ziyuan Liu, Kazuto Ikeda, Koji Usuda (STARC) 		Nitrogen in-depth profile and chemical states in Si oxynitride films are important to understand characteristics of the ... [more] SDM2006-55
pp.77-80
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