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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2007-06-08 09:50 |
Hiroshima |
Hiroshima Univ. ( Faculty Club) |
Modeling of NBTI Degradation for SiON pMOSFET Junji Shimokawa, Toshiyuki Enda, Nobutoshi Aoki, Hiroyoshi Tanimoto, Sanae Ito, Yoshiaki Toyoshima (Toshiba) SDM2007-41 |
For SiO${}_2$ pMOSFETs, the reaction-diffusion model is well used to describe the NBTI degradation theoretically and the... [more] |
SDM2007-41 pp.55-58 |
SDM, VLD |
2006-09-26 13:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Improvement of Drive Current in Bulk-FinFET using Full 3D Process/Device Simulations Takahisa Kanemura, Takashi Izumida, Nobutoshi Aoki, Masaki Kondo, Sanae Ito, Toshiyuki Enda, Kimitoshi Okano, Hirohisa Kawasaki, Atsushi Yagishita, Akio Kaneko, Satoshi Inaba, Mitsutoshi Nakamura, Kazunari Ishimaru, Kyoichi Suguro, Kazuhiro Eguchi (Toshiba Corp.) |
We discussed the optimization of structure of bulk-FinFETs and ion implantations by using 3-D process and device simulat... [more] |
VLD2006-43 SDM2006-164 pp.25-29 |
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