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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, THz 2021-12-21
10:20		 Miyagi
(Primary: On-site, Secondary: Online)		 Device Performances and Delay Time Analysis of GaInSb-Channel HEMTs Scaled to Epitaxial Structures
Yuuto Isomae, Naoyuki Kishimoto, Takuya Hayashi, Munemasa Kunisawa (TUS), Issei Watanabe, Yoshimi Yamashita, Ryuto Machida, Shinsuke Hara, Akifumi Kasamatsu (NICT), Akira Endoh, Hiroki Fujishiro (TUS) ED2021-57		 We fabricated three-types of Al0.40In0.60Sb/Ga0.22In0.78Sb-HEMTs using epitaxial heterostructures in which the channel l... [more] ED2021-57
pp.44-47
ED, THz 2017-12-19
09:00		 Miyagi RIEC, Tohoku Univ [Invited Talk] Development of Antimonide-Based Transistors
Hiroki Fujishiro, Kyosuke Isono, Takuto Takahashi, Yoshiaki Harada, Naoki Oka, Jun Takeuchi, Yui Fujisawa (TUS), Sachie Fujikawa (Tokyo Denki Univ.), Ryuto Machida (TUS), Issei Watanabe, Yoshimi Yamashita, Akira Endoh, Shinsuke Hara, Akifumi Kasamatsu (NICT) ED2017-81		 Quantum corrected Monte Carlo simulation shows that the InSb HEMT exhibits intrinsic fT more than 1 THz from Vds of arou... [more] ED2017-81
pp.33-36
ED 2013-08-09
09:50		 Toyama University of Toyama Formation of GaSb Islands on Si(111) Substrate Using Ga/Si(111) Surface Reconstructions
Ryuto Machida, Ryusuke Toda, Keisuke Yoshiki, Sachie Fujikawa (Tokyo Univ. of Science), Shinsuke Hara (NICT), Katsumi Irokawa, Hirofumi Miki (Tokyo Univ. of Science), Akira Kawazu (Tokyo Denki Univ.), Hiroki I. Fujishiro (Tokyo Univ. of Science) ED2013-46		 Gallium antimonide (GaSb) nanostructures on Si (Silicon) have been intensely studied due to the application as a near-in... [more] ED2013-46
pp.43-48
 Results 1 - 3 of 3  /   
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