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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2015-06-19
14:15		 Aichi VBL, Nagoya Univ. Understanding of Schottky Barrier Height Modulation at NiGe/Ge Interfaces for Metal S/D Ge CMOS Technology
Hiroshi Oka, Yuya Minoura, Ryohei Asahara, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2015-48		 Besides low solubility and activation rate of n-type dopant in Ge, Fermi level pinning (FLP) at metal/Ge interface leads... [more] SDM2015-48
pp.51-55
SDM 2014-06-19
09:30		 Aichi VBL, Nagoya Univ. Process Design of High-k/Ge Gate Stack for Improving Thermal Stability and Interface Properties in Sub-1-nm Regime
Ryohei Asahara, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2014-43		 Suppression of GeOx formation and Ge diffusion into high-k layer is important to develop sub-1-nm EOT metal/high-k gate ... [more] SDM2014-43
pp.1-5
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