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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, CPM, LQE 2006-10-06
16:50
Kyoto   Effects of ion damage reduction due to N2+ on InN film growth on Si substrate by ECR-MBE method
Tokuo Yodo, Teruya Shimada, Sumito Tagawa, Ryo Nishimoto, Shiro Hidaka, Keita Ishi, Hiroshi Segawa, Junichi Hirakawa, Yoshiyuki Harada (Osaka Inst.of Tech.)
The problem of ECR-MBE method is to generate the N2+ ion from ECR plasma during growth that damages the film. The bad in... [more] ED2006-175 CPM2006-112 LQE2006-79
pp.121-125
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