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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, EID |
2017-12-22 11:00 |
Kyoto |
Kyoto University |
Temperature Dependent Hall Coefficient in Heavily Al-Doped 4H-SiC
-- Relationship between Inversion of Hall Coefficient and Conduction Mechanism -- Rinya Nishihata, Akinobu Takeshita, Tatsuya Imamura, Kota Takano, Kazuya Okuda, Shinji Ozawa, Atsuki Hidaka, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-13 SDM2017-74 |
To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is essential to redu... [more] |
EID2017-13 SDM2017-74 pp.9-12 |
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