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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 18 of 18  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2012-10-27
11:25
Niigata   Field Emission Characteristics Considering both the Shield Effect and Series Resistance
Yuji Asada, Masahiro Yamashita, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2012-109
To estimate the effects of series resistance on the field emission current associated with an array of carbon nanotubes ... [more] CPM2012-109
pp.87-90
CPM 2011-10-27
09:55
Fukui Fukui Univ. Preparation of SiC MOS structure using SiO2 Layer deposited by Thermal Decomposition of TEOS
Mitsunori Hemmi, Yuya Iguchi, Takashi Sakai, Akihiko Sugita, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2011-119
A oxide layer was deposited on a SiC surface by thermal chemical vapor deposition as a source material TEOS. After the d... [more] CPM2011-119
pp.51-54
CPM 2011-08-10
13:50
Aomori   Direct Nitridation of SiC Surface and Characterization of Nitride/SiC Interface
Takashi Sakai, Mitsunori Hemmi, Yusuke Murata, Shinichiro Suzuki, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2011-58
A nitride layer was formed on a SiC surface by direct nitridation method to use an interfacial layer of the SiC MIS stru... [more] CPM2011-58
pp.11-14
CPM 2010-10-28
15:15
Nagano   Characterization of CuMO2 films grown by reactive sputtering
Tsubasa Ogawa, Takuya Yokomoto, Rinpei Hayashibe, Katsuya Abe (Shinshu Univ.)
 [more]
CPM 2010-10-29
09:00
Nagano   Low temperature growth of SiC films by HW-CVD using graphite filaments
Yuya Sakaguchi, Hironori Nakamura, Jun Arima, Kazuhisa Moriyama, Rinpei Hayashibe, Katsuya Abe (Shinshu Univ.) CPM2010-99
Silicon carbide films were prepared on p-Si(001) and glass substrates by hot-wire chemical vapor deposition
using grap... [more]
CPM2010-99
pp.43-46
CPM 2010-10-29
09:25
Nagano   Estimation of nitride layer thickness and characterization of the interface between SiC and nitride layer prepared by direct nitridation
Shinichiro Suzuki, Yusuke Murata, Mitsunori Henmi, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2010-100
A nitride layer was formed on a SiC surface by direct nitridation in N$_{2}$ or NH$_{3}$. The surface was characterized ... [more] CPM2010-100
pp.47-50
CPM 2010-10-29
09:50
Nagano   Estimation of interface state density at nitride/SiC interface using current-voltage characteristics of MIS Schottky contact
Yusuke Murata, Shinichiro Suzuki, Shohei Kobayashi, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2010-101
The nitride film was formed by direct nitridation with NH$_3$ on n type 4H-SiC to form an MIS Schottky diode. Ideality f... [more] CPM2010-101
pp.51-54
CPM 2010-07-29
13:30
Hokkaido Michino-Eki Shari Meeting Room Fabrication of CuInO2 thin films using RF sputtering and studies of annealing effects
Tsubasa Ogawa, Takuya Yokomoto, Rinpei Hayashibe, Tomohiko Yamakami, Katsuya Abe (Shinshu Univ.)
 [more]
CPM 2010-07-30
10:55
Hokkaido Michino-Eki Shari Meeting Room Field Emission from Horizontally Aligned Carbon Nanotube
Hirofumi Saito, Tomohiko Yamakami, Rinpei Hayashibe, Takumi Ooike, Masahiro Yamashita, Kiichi Kamimura (Shinshu Univ.) CPM2010-39
To estimate the field emission current associated with an array of carbon nanotubes (CNTs) parallel to a planar cathode ... [more] CPM2010-39
pp.45-48
CPM 2009-10-29
15:50
Toyama Toyama Prefectural University Characterization of CuInO2 thin films grown by RF reactive sputtering
Tsubasa Ogawa, Oki Kuraishi, Yoshitaka Kobayashi, Tomohiko Yamakami, Rinpei Hayashibe, Katsuya Abe (Shinshu Univ.)
(To be available after the conference date) [more]
CPM 2009-10-29
16:15
Toyama Toyama Prefectural University Fabrication and Characterization of Cold Cathode using Carbon Nanotubes Dispersed in Insulator.
Hirofumi Saito, Tatsuya Hagino, Junnki Matsumoto, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2009-93
Field emission cathode was fabricated using mixed compound of carbon nanotube and insulator. High field enhancement acto... [more] CPM2009-93
pp.17-20
CPM 2009-08-10
15:30
Aomori Hirosaki Univ. Fabrication of SiC MIS structure using direct nitridation layer as an interfacial layer
Shinichiro Suzuki, Akira Sengoku, Takuma Tsuji, Mitsunori Henmi, Yusuke Murata, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2009-35
Interface state density was estimated from diode factor $n$ of SiC MIS Schottky diode. The interface state density was t... [more] CPM2009-35
pp.9-12
CPM 2008-10-31
11:20
Niigata Niigata Univ. Field Emission Cathod Prepared with Carbon Nano-tubes Distributed in Insulation Film
Hirofumi Saito, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2008-87
It was proposed that a field emission cathode with high efficiency could be prepared from carbon nanotubes distributed i... [more] CPM2008-87
pp.71-74
CPM 2008-08-04
14:25
Hokkaido Muroran Institute of Technology Field Emission Characteristics of Sputter Deposited Carbon Films
Kei Miyazaki, Yoshiyuki Taguchi, Hirofumi Saito, Takuya Miyanaga, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2008-42
The field emission characteristics of sputter deposited carbon films were measured and discussed. The low threshold fie... [more] CPM2008-42
pp.5-8
CPM 2007-11-17
10:15
Niigata Nagaoka University of Technology Fabrication of SiC MIS Structure by RF Plasma Assisted Nitridation with DC Bias.
Yoshiki Ishida, Chen Chen, Masataka Hagihara, Hiroaki Shiozawa, Akira Sengoku, Rinpei Hayashibe, Tomohiko Yamakami, Kiichi Kamimura (Shinshu Univ.) CPM2007-118
Nitride layer was formed on the surface of 4H-SiC by plasma assisted nitridation. The XPS measurement suggested that the... [more] CPM2007-118
pp.69-72
CPM 2006-11-09
15:45
Ishikawa Kanazawa Univ. Reactive Sputter Deposition of AlN Film and Its Application to LD Submount
Akihiro Shiono, Masahide Nakakuki, Isao Kobayashi, Tomohiko Yamakami, Rinpei Hayashibe (Shinshu Univ.), Motoki Obata (CITIZEN FINE TECH), Katsuya Abe, Kiichi Kamimura (Shinshu Univ.)
 [more] CPM2006-118
pp.31-35
ED, CPM, LQE 2006-10-06
16:00
Kyoto   Direct nitridation of SiC surface and characterization of nitride layer by XPS
Tetsuo Yamaguchi, Yoshiki Ishida, Chen Chen, Masataka Hagihara, Rinpei Hayashibe, Tomohiko Yamakami, Katsuya Abe, Kiichi Kamimura (Shinshu Univ.)
 [more] ED2006-173 CPM2006-110 LQE2006-77
pp.113-116
CPM 2005-11-11
15:10
Fukui   Characterization of insulating nitride films grown on 6H-SiC by plasma nitridation method
Tetsuo Yamaguchi, YingShen Liu, Yoshiki Ishida, Tomohiko Yamakami, Rinpei Hayashibe, Katsuya Abe, Kiichi Kamimura (Shinshu Univ.)
The quality of SiC-MOS devices has been critically limited by carbon related defects in the SiC oxide film grown by ther... [more] CPM2005-156
pp.25-28
 Results 1 - 18 of 18  /   
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