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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2024-01-31
14:50		 Tokyo KIT Toranomon Graduate School
(Primary: On-site, Secondary: Online)		 [Invited Talk] Endurance Improvement of HfO-FeFET by Controlled Charge Trapping
Kunifumi Suzuki, Kiwamu Sakuma, Yoko Yoshimura, Reika Ichihara, Kazuhiro Matsuo, Daisuke Hagishima, Makoto Fujiwara, Masumi Saitoh (KIOXIA) SDM2023-78		  [more] SDM2023-78
pp.17-19
SDM 2022-01-31
14:15		 Online Online [Invited Talk] ****
Reika Ichihara (Kioxia) SDM2021-70		 e establish an accurate picture of cycling degradation in HfO2-FeFET based on the dynamics of various charge-trapping re... [more] SDM2021-70
pp.9-11
SDM 2021-01-28
13:05		 Online Online [Invited Talk] ****
Reika Ichihara (Kioxia) SDM2020-49		 It has been known that charge trapping (Qt) reduces the effect of spontaneous polarization (Ps) in HfO2 based FeFET. Rec... [more] SDM2020-49
pp.1-2
SDM, ICD, ITE-IST [detail] 2019-08-09
13:25		 Hokkaido Hokkaido Univ., Graduate School /Faculty of Information Science and [Invited Talk] Demonstration of Ag Ionic Memory Cell Array for Terabit-Scale High-Density Application
Reika Ichihara, Shosuke Fujii, Takuya Konno, Marina Yamaguchi, Harumi Seki, Hiroki Tanaka, Dandan Zhao, Yoko Yoshimura, Masumi Saitoh, Masato Koyama (TMC) SDM2019-50 ICD2019-15		 We demonstrated a cross-point memory array composed of Ag ionic memory cell with sub-μA and selectorless operation and 1... [more] SDM2019-50 ICD2019-15
pp.85-88
ICD, SDM 2008-07-18
15:05		 Tokyo Kikai-Shinko-Kaikan Bldg. Impact of Tantalum Composition in TaCx/HfSiON Gate Stack on Device Performance of Aggressively Scaled CMOS Devices with SMT and Strained CESL
Masakazu Goto, Kosuke Tatsumura, Shigeru Kawanaka, Kazuaki Nakajima, Reika Ichihara, Yasuhito Yoshimizu, Hiroyuki Onoda, Koji Nagatomo, Toshiyuki Sasaki, Takashi Fukushima, Akiko Nomachi, Seiji Inumiya, Tomonori Aoyama, Masato Koyama, Yoshiaki Toyoshima (Toshiba Corp.) SDM2008-147 ICD2008-57		 We report TaCx/HfSiON gate stack CMOS device with simplified gate 1st process from the viewpoints of fixed charge genera... [more] SDM2008-147 ICD2008-57
pp.109-114
ICD, SDM 2007-08-24
10:20		 Hokkaido Kitami Institute of Technology [Special Invited Talk] Effect of metal-gate/high-k on characteristics of MOSFETs for 32nm CMOS and beyond
Masato Koyama, Masahiro Koike, Yuuichi Kamimuta, Masamichi Suzuki, Kosuke Tatsumura, Yoshinori Tsuchiya, Reika Ichihara, Masakazu Goto, Koji Nagatomo, Atsushi Azuma, Shigeru Kawanaka, Kazuaki Nakajima, Katsuyuki Sekine (Toshiba Corp.) SDM2007-159 ICD2007-87		 In this paper, influences of metal-gate and high-k gate dielectric application on MOSFET (32nm node and beyond) characte... [more] SDM2007-159 ICD2007-87
pp.101-106
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