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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 23  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2023-06-26
11:50
Hiroshima Hiroshima Univ. (Res. Inst. of Nanodevices) Impact of SiH4 exposure to Fe-NDs on silicidation reaction
Haruto Saito, Katsunori Makihara, Shun Tanida, Noriyuki Taoka, Seiichi Miyazaki (Nagoya Univ.) SDM2023-30
 [more] SDM2023-30
pp.11-14
SDM 2022-06-21
13:00
Aichi Nagoya Univ. VBL3F [Invited Talk] Superiority of counter-doped MOSFET from the viewpoint of oxide/4H-SiC interface property
Shigehisa Shibayama, Takuma Doi, Mitsuo Sakashita, Noriyuki Taoka (Nagoya Univ.), Mitsuaki Shimizu (AIST), Osamu Nakatsuka (Nagoya Univ.) SDM2022-24
To decrease channel resistance of 4H-SiC power MOSFET, there are two important approaches; (1) reducing the interface st... [more] SDM2022-24
pp.1-4
SDM 2022-06-21
14:00
Aichi Nagoya Univ. VBL3F Impacts of Surface Orientation of Si Substrate on Crystalline Structures and Chemical Composition of Hf-oxide Layers Formed by Post Oxidation
Wataru Yasuda, Noriyuki Taoka, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2022-26
Orthorhombic (O)Hf-based oxide exhibits ferroelectricity even in a thin film with a thickness of 5-10 nm. However, there... [more] SDM2022-26
pp.9-12
SDM 2022-06-21
17:20
Aichi Nagoya Univ. VBL3F Formation of Ultra-Thin Nickel Silicide Layer with controlled Surface Morphology and Crystalline Phase on SiO2
Keisuke Kimura, Noriyuki Taoka, Shunsuke Nishimura, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya. Univ) SDM2022-31
Recently, a device with metal nanosheet (MNS) has been attracted much attention. However, control of surface morphology ... [more] SDM2022-31
pp.27-30
SDM 2022-06-21
17:40
Aichi Nagoya Univ. VBL3F Formation of Al(111) Thin Layer on Si(111) and Control of Surface Si Segregation by Thermal Annealing
Taiki Sakai, Keigo Matsushita, Akio Ohta, Noriyuki Taoka, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2022-32
 [more] SDM2022-32
pp.31-34
SDM 2021-06-22
17:30
Online Online Formation and Thickness Control of Ultrathin Ge Layer on Al and Ag/(111) Structures by Thermal Anneal
Akio Ohta, Keigo Matsushita, Noriyuki Taoka, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2021-29
Ge surface segregation on Al/Ge(111) and Ag/Ge(111) structures by thermal anneal was investigated. Ultrathin Ge formati... [more] SDM2021-29
pp.27-31
SDM 2019-06-21
11:40
Aichi Nagoya Univ. VBL3F Formation of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface by Thermal Annealing
Masato Kobayashi, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Noriyuki Taoka, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2019-27
We have studied the chemical and crystallographic structures of vacuum evaporated Al/Ge(111) before and after the therma... [more] SDM2019-27
pp.11-15
SDM 2018-06-25
11:20
Aichi Nagoya Univ. VBL3F Comparative study of SiO2/GaN interface structures and properties between Ar and He as a mixture gas with oxygen for remote plasma chemical vapor deposition
Nguyen Xuan Truyen (Nagoya Univ.), Noriyuki Taoka (AIST-NU GaN-OIL), Akio Ohta (Nagoya Univ.), Hisashi Yamada, Tokio Takahashi (AIST-NU GaN-OIL), Mitsuhisa Ikeda, Makihara Katsunori (Nagoya Univ.), Mitsuaki Shimizu (AIST-NU GaN-OIL), Seiichi Miyazaki (Nagoya Univ.) SDM2018-17
 [more] SDM2018-17
pp.5-9
SDM 2018-06-25
15:15
Aichi Nagoya Univ. VBL3F Chemical Bonding Features and Thermal Stability at SiO2/GaN interfaces Formed by Remote O2 Plasma Enhanced CVD
Ryohei Matsuda, Akio Ohta (Nagoya Univ.), Noriyuki Taoka (AIST), Mitsuhisa Ikeda, Katsunori Makihara (Nagoya Univ.), Mitsuaki Shimizu (AIST), Seiichi Miyazaki (Nagoya Univ.) SDM2018-22
A ~6.2 nm-thick SiO2 was deposited on n-type GaN(0001) by the remote O2 plasma enhanced CVD, and chemical bonding featur... [more] SDM2018-22
pp.29-32
SDM 2018-06-25
15:35
Aichi Nagoya Univ. VBL3F Modification of Al2O3/SiC interface by oxygen radical irradiation
Takuma Doi (Nagoya Univ.), Wakana Takeuchi (AIT), Mitsuo Sakashita (Nagoya Univ.), Noriyuki Taoka (AIST), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2018-23
To realizing power-saving SiC MOSFET, it is needed to reduce the density of interface traps (Dit) between insulator and ... [more] SDM2018-23
pp.33-36
LQE, CPM, ED 2017-12-01
12:30
Aichi Nagoya Inst. tech. Characterization of Chemical Structure and Electrical Properties of Remote O2 Plasma Enhanced CVD SiO2/GaN(0001) structures
NguyenXuan Truyen (Nagoya Univ.), Noriyuki Taoka (AIST GaN OIL), Akio Ohta (Nagoya Univ.), Hisashi Yamada, Tokio Takahashi (AIST GaN OIL), Mitsuhisa Ikeda, Katsunori Makihara (Nagoya Univ.), Mitsuaki Shimizu (AIST GaN OIL), Seiichi Miyazaki (Nagoya Univ.) ED2017-61 CPM2017-104 LQE2017-74
Impacts of post-deposition annealing (PDA) on interface properties in a SiO2/GaN structure formed by a remote oxygen pla... [more] ED2017-61 CPM2017-104 LQE2017-74
pp.61-64
SDM 2015-03-02
11:35
Tokyo Kikai-Shinko-Kaikan Bldg [Invited Talk] Formation of Epitaxial Metal/Gemanium Contacts and Control of Electric Conduction Property at the Interface
Osamu Nakatsuka, Yunsheng Deng, Akihiro Suzuki, Mitsuo Sakashita, Noriyuki Taoka, Shigeaki Zaima (Nagoya Univ.) SDM2014-165
We need to develop the control technology of the electronic property at metal/Ge interfaces for low-power and high-speed... [more] SDM2014-165
pp.17-22
SDM 2014-06-19
10:10
Aichi VBL, Nagoya Univ. Alleviation of Fermi level pinning of Sn/Ge contact
Akihiro Suzuki, Shunsuke Asaba, Jun Yokoi, Masashi Kurosawa, Kimihiko Kato, Mitsuo Sakashita, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2014-45
 [more] SDM2014-45
pp.11-16
SDM 2014-06-19
11:05
Aichi VBL, Nagoya Univ. Control of Stacking Fault Structures in Ge1-xSnx Epitaxial Growth
Takanori Asano (Nagoya Univ.), Noriyuki Taoka (IHP Microelectronics), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2014-47
Ge or Ge1-xSnx layer with (110) surface has attracted much attentions for Ge multi-gate MOS transistors. For forming a h... [more] SDM2014-47
pp.21-25
SDM 2014-06-19
16:55
Aichi VBL, Nagoya Univ. [Invited Lecture] Low temperature poly-crystallization of group-IV semiconductor films on insulators -- use of low-melting-point Sn --
Masashi Kurosawa (Nagoya Univ./JSPS), Noriyuki Taoka (Nagoya Univ.), Hiroshi Ikenoue (Kyushu Univ.), Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2014-60
Low temperature growth of Ge1-xSnx on insulators can provide much wider range of options for device fabrication of 3D-LS... [more] SDM2014-60
pp.91-95
CPM, ED, SDM 2014-05-29
14:20
Aichi   Interaction between Sn and Vacancy-rerated Defects in n-type Germanium Single Crystal
Wakana Takeuchi, Noriyuki Taoka, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) ED2014-41 CPM2014-24 SDM2014-39
Interaction between Sn and vacancy-related defects in an n-type Ge single crystal have been investigated by deep-level t... [more] ED2014-41 CPM2014-24 SDM2014-39
pp.113-118
SDM 2013-06-18
09:00
Tokyo Kikai-Shinko-Kaikan Bldg. Control of Pr-Oxide Crystalline Phase by Regulating Oxidant Partial Pressure and Si Diffusion
Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-44
For realization of hexagonal Pr2O3 thin film as higher-k gate dielectrics, we have investigated the effect of H2O partia... [more] SDM2013-44
pp.1-6
SDM 2013-06-18
09:20
Tokyo Kikai-Shinko-Kaikan Bldg. Formation of Ultra Thin GeO2 Film Using Tetraethoxy-Germanium
Teppei Yoshida, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-45
For realizing three-dimensional Ge channel MOSFET, fabrication of good interface property of high-k/Ge structure, and un... [more] SDM2013-45
pp.7-11
SDM 2013-06-18
09:40
Tokyo Kikai-Shinko-Kaikan Bldg. Clarification of oxidation mechanisms in Al2O3/Ge structure and impact of interface reactions on interface properties
Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-46
Currently, it is reported that the Ge surface oxidation through the thin Al2O3 layer using oxygen plasma (post plasma ox... [more] SDM2013-46
pp.13-18
SDM, ED
(Workshop)
2012-06-28
10:00
Okinawa Okinawa Seinen-kaikan Effects of Light and Air Exposures on Electrical Properties of GeO2/Ge and Al2O3/Ge Gate Stack Structures
Kusumandari, Wakana Takeuchi, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)
Low temperature processes such as plasma process are required for realizing Ge metal-oxide-semiconductor field effect tr... [more]
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