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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2008-12-19
16:20
Miyagi Tohoku Univ. [Invited Talk] Wireless system technologies and millimeter-wave device research
Toshiaki Matsui, Issei Watanabe, Akira Endoh, Yoshimi Yamashita, Norio Onojima, Masataka Higashiwaki, Nobumitsu Hirose (NICT) ED2008-190
Millimeter-wave research and developments are now state necessity for expansion of radio spectrum resource. Recent wides... [more] ED2008-190
pp.33-34
ED 2007-11-27
13:30
Miyagi Tohoku Univ. Research Institute of Electrical Communication Research on SiGe/Si HEMT for millimeter-wave band operation
Norio Onojima, Akifumi Kasamatsu, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui (NICT) ED2007-187
We have fabricated sub-100-nm-gate-length SiGe/Si high electron mobility transistors (HEMTs) toward ultra-high-speed Si-... [more] ED2007-187
pp.1-5
ED, CPM, LQE 2006-10-05
15:45
Kyoto   Estimation of AlGaN/GaN HFET surface barrier height with Cat-CVD SiN passivation by XPS and C-V measurements
Norio Onojima, Masataka Higashiwaki (NICT), Jun Suda, Tsunenobu Kimoto (Kyoto Univ.), Takashi Mimura (NICT/Fujitsu Lab.), Toshiaki Matsui (NICT)
AlGaN surface barrier heights in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without SiN passiva... [more] ED2006-158 CPM2006-95 LQE2006-62
pp.35-38
LQE, ED, CPM 2005-10-13
17:40
Shiga Ritsumeikan Univ. Short-gate AlGaN/GaN HFETs with extremely thin AlGaN barriers for millimeter-wave operations
Masataka Higashiwaki, Norio Onojima, Toshiaki Matsui (NICT)
 [more] ED2005-138 CPM2005-125 LQE2005-65
pp.93-96
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