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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED |
2008-12-19 16:20 |
Miyagi |
Tohoku Univ. |
[Invited Talk]
Wireless system technologies and millimeter-wave device research Toshiaki Matsui, Issei Watanabe, Akira Endoh, Yoshimi Yamashita, Norio Onojima, Masataka Higashiwaki, Nobumitsu Hirose (NICT) ED2008-190 |
Millimeter-wave research and developments are now state necessity for expansion of radio spectrum resource. Recent wides... [more] |
ED2008-190 pp.33-34 |
ED |
2007-11-27 13:30 |
Miyagi |
Tohoku Univ. Research Institute of Electrical Communication |
Research on SiGe/Si HEMT for millimeter-wave band operation Norio Onojima, Akifumi Kasamatsu, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui (NICT) ED2007-187 |
We have fabricated sub-100-nm-gate-length SiGe/Si high electron mobility transistors (HEMTs) toward ultra-high-speed Si-... [more] |
ED2007-187 pp.1-5 |
ED, CPM, LQE |
2006-10-05 15:45 |
Kyoto |
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Estimation of AlGaN/GaN HFET surface barrier height with Cat-CVD SiN passivation by XPS and C-V measurements Norio Onojima, Masataka Higashiwaki (NICT), Jun Suda, Tsunenobu Kimoto (Kyoto Univ.), Takashi Mimura (NICT/Fujitsu Lab.), Toshiaki Matsui (NICT) |
AlGaN surface barrier heights in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without SiN passiva... [more] |
ED2006-158 CPM2006-95 LQE2006-62 pp.35-38 |
LQE, ED, CPM |
2005-10-13 17:40 |
Shiga |
Ritsumeikan Univ. |
Short-gate AlGaN/GaN HFETs with extremely thin AlGaN barriers for millimeter-wave operations Masataka Higashiwaki, Norio Onojima, Toshiaki Matsui (NICT) |
[more] |
ED2005-138 CPM2005-125 LQE2005-65 pp.93-96 |
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