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Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2013-01-18
10:50		 Tokyo Kikai-Shinko-Kaikan Bldg. 2.6GHz Broadband 40W GaN HEMT Doherty Amplifier
Norihiro Yoshimura, Naoki Watanabe, Hiroaki Deguchi, Norihiko Ui (SEDI) ED2012-120 MW2012-150		 A 40W average output power asymmetric Doherty power amplifier (PA) for 2.6GHz band was developed using broadband inverse... [more] ED2012-120 MW2012-150
pp.45-48
ED, MW 2012-01-12
15:10		 Tokyo Kikai-Shinko-Kaikan Bldg Ruggedness and Reliability of GaN HEMT for L/S-band High Power Applications
Ken Kikuchi, Fumikazu Yamaki, Kazutaka Inoue (SEI), Masahiro Nishi, Hitoshi Haematsu, Norihiko Ui, Kaname Ebihara, Atsushi Nitta (SEDI), Seigo Sano (SEI) ED2011-138 MW2011-161		 We have evaluated our L/S-band GaN HEMT for ruggedness and reliability. In terms of ruggedness, we demonstrated our GaN ... [more] ED2011-138 MW2011-161
pp.107-110
ED, MW 2008-01-16
14:25		 Tokyo Kikai-Shinko-Kaikan Bldg. GaN HEMT Doherty Amplifiers for W-CDMA and WiMAX Base Station Applications
Hiroaki Sano, Norihiko Ui, Seigo Sano (Eudyna Devices) ED2007-209 MW2007-140		 Two types of Doherty amplifiers for mobile communication base stations have been developed using GaN HEMTs biased at dra... [more] ED2007-209 MW2007-140
pp.17-22
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