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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED |
2010-06-17 15:15 |
Ishikawa |
JAIST |
Fabrication of high-frequency and high-power AlGaN/GaN HEMTs Yoshimi Yamashita, Issei Watanabe, Akira Endoh, Nobumitsu Hirose, Toshiaki Matsui (NICT), Takashi Mimura (NICT/Fujitsu lab.) ED2010-38 |
High-power AlGaN/GaN high electron mobility transistors (HEMTs) are the most promising devices for future high-speed and... [more] |
ED2010-38 pp.25-30 |
ED, LQE, CPM |
2009-11-20 15:50 |
Tokushima |
Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
Output characteristics of AlGaN/GaN HEMTs at 60 GHz frequency band Issei Watanabe, Akira Endoh, Yoshimi Yamashita, Nobumitsu Hirose (NICT), Takashi Mimura (NICT/Fujitsu Labs.), Toshiaki Matsui (NICT) ED2009-159 CPM2009-133 LQE2009-138 |
AlGaN/GaN high electron mobility transistors (HEMTs) are the most promising devices for future high-speed and long-range... [more] |
ED2009-159 CPM2009-133 LQE2009-138 pp.151-155 |
ED |
2008-12-19 16:20 |
Miyagi |
Tohoku Univ. |
[Invited Talk]
Wireless system technologies and millimeter-wave device research Toshiaki Matsui, Issei Watanabe, Akira Endoh, Yoshimi Yamashita, Norio Onojima, Masataka Higashiwaki, Nobumitsu Hirose (NICT) ED2008-190 |
Millimeter-wave research and developments are now state necessity for expansion of radio spectrum resource. Recent wides... [more] |
ED2008-190 pp.33-34 |
ED |
2007-11-27 13:30 |
Miyagi |
Tohoku Univ. Research Institute of Electrical Communication |
Research on SiGe/Si HEMT for millimeter-wave band operation Norio Onojima, Akifumi Kasamatsu, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui (NICT) ED2007-187 |
We have fabricated sub-100-nm-gate-length SiGe/Si high electron mobility transistors (HEMTs) toward ultra-high-speed Si-... [more] |
ED2007-187 pp.1-5 |
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