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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2012-04-23
Iwate Seion-so, Tsunagi Hot Spring (Iwate) [Invited Talk] A 19nm 112.8mm2 64Gb Multi-level(2bit/cell) Flash Memory with 400Mb/s/pin 1.8V Toggle Mode Interface
Noboru Shibata, Kazushige Kanda, Toshiki Hisada, Katsuaki Isobe, Manabu Sato, Yuui Shimizu, Takahiro Shimizu, Takahiro Sugimoto, Tomohiro Kobayashi, Kazuko Inuzuka, Naoaki Kanagawa, Yasuyuki Kajitani, Takeshi Ogawa, Jiyun Nakai (Toshiba), Teruhiko Kamei (SanDisk) ICD2012-1
A 64Gb MLC NAND flash memory on 19nm CMOS technology has been developed. By adopting One-Sided All-Bit-Line architecture... [more] ICD2012-1
ICD 2011-04-18
Hyogo Kobe University Takigawa Memorial Hall [Invited Talk] A Technical Trend and Embedded DRAM Technology for High-Performance NAND Flash Memories
Daisaburo Takashima, Mitsuhiro Noguchi, Noboru Shibata, Kazushige Kanda, Hiroshi Sukegawa, Shuso Fujii (Toshiba) ICD2011-2
In this paper, first, the technical trend for high-bandwidth NAND flash memories is introduced. Second, an embedded DRAM... [more] ICD2011-2
ICD 2009-04-14
Miyagi Daikanso (Matsushima, Miyagi) A 7.8MB/s 64Gb 4bit/Cell NAND Flash Memory in 43nm CMOS
Mitsuaki Honma (Toshiba Corp.), Cuong Trinh (SanDisk Corp.), Noboru Shibata, Takeshi Nakai, Mikio Ogawa, Junpei Sato, Yoshikazu Takeyama, Katsuaki Isobe (Toshiba Corp.), Binh Le, Farookh Moogat, Nima Mokhlesi, Kenji Kozakai, Patrick Hong, Teruhiko Kamei (SanDisk Corp.), Kiyoaki Iwasa (Toshiba Corp.) ICD2009-9
A 4bit/cell with 43nm CMOS technology NAND flash memory is realized.
64Gb/die is largest capacity.
To achieve 16 leve... [more]
ICD 2005-04-14
Fukuoka   A 146mm2 8Gb NAND Flash Memory with 70nm CMOS Technology
Takumi Abe, Takahiko Hara, Koichi Fukuda, Kazuhisa Kanazawa, Noboru Shibata, Koji Hosono, Hiroshi Maejima, Michio Nakagawa, Masatsugu Kojima, Masaki Fujiu, Yoshiaki Takeuchi, Kazumi Amemiya, Midori Morooka (Toshiba), Teruhiko Kamei, Hiroaki Nasu (SanDisk)
 [more] ICD2005-10
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