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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 5 of 5  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
EE, WPT
(Joint)
2016-10-06
16:25
Kyoto   Drive-by-Microwave(DBM) technologies for power switching devices
Songbek Che, Shuichi Nagai, Noboru Negoro, Yasufumi Kawai, Osamu Tabata, Yasuhiro Yamada, Hiroaki Ueno, Tetsuzo Ueda (Panasonic AIS) EE2016-23 WPT2016-29
(To be available after the conference date) [more] EE2016-23 WPT2016-29
pp.25-30(EE), pp.55-60(WPT)
ICD, SDM 2012-08-03
10:05
Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido [Invited Talk] A DC-Isolated Gate Drive IC with Drive-by-Microwave Technology
Shuichi Nagai, Noboru Negoro, Takeshi Fukuda, Yasufumi Kawai, Tetsuzo Ueda, Tsuyoshi Tanaka, Nobuyuki Otsuka, Daisuke Ueda (Panasonic) SDM2012-79 ICD2012-47
We have developed new isolated gate drivers with the Drive-by-Microwave Technology that regenerates the gate signal afte... [more] SDM2012-79 ICD2012-47
pp.89-92
ED 2010-12-17
10:35
Miyagi Tohoku University (Research Institute of Electrical Communication) [Invited Talk] GaN Devices on Low Cost Substrates for Long-distance Millimeter-wave Communication
Hiroyuki Sakai, Masayuki Kuroda, Noboru Negoro, Tomohiro Murata, Shuichi Nagai, Masaaki Nishijima, Yoshiharu Anda, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2010-167
We present GaN Devices on low cost substrates for long-distance millimeter-wave communication. Sapphire substrates are u... [more] ED2010-167
pp.53-58
ED, MW 2008-01-17
14:50
Tokyo Kikai-Shinko-Kaikan Bldg. A 26GHz Short-Range UWB Vehicular-Radar Using 2.5Gcps Spread Spectrum Modulation
Takeshi Fukuda, Noboru Negoro, Shinji Ujita, Shuichi Nagai, Masaaki Nishijima, Hiroyuki Sakai, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric) ED2007-223 MW2007-154
A 26GHz short-range radar system has been developed based on a 2.5Gcps direct sequence spread spectrum technique combine... [more] ED2007-223 MW2007-154
pp.93-97
MW, ED 2005-11-17
13:35
Saga   A K-band AlGaN/GaN HFET MMIC Amplifier on Sapphire using novel superlattice cap layer
Masaaki Nishijima, Tomohiro Murata, Yutaka Hirose, Masahiro Hikita, Noboru Negoro, Hiroyuki Sakai, Yasuhiro Uemoto, Kaoru Inoue, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric)
We have developed a K-band AlGaN/GaN HFET MMIC amplifier by applying an AlGaN/GaN superlattice (SL) capped structure on ... [more] ED2005-165 MW2005-120
pp.39-43
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