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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM, ED, LQE | 2022-11-24 14:15 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Two-dimensional characterization of the edge structure of Ni/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy Hiroki Imabayashi (Univ. of Fukui), Fumimasa Horikiri, Yoshinobu Narita, Noboru Fukuhara (Sumitomo Chemical Co, Ltd.), Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Univ. of Fukui)  ED2022-33 CPM2022-58 LQE2022-66 |
[more] | ED2022-33 CPM2022-58 LQE2022-66 pp.45-48 |
| ED, CPM, LQE | 2021-11-26 13:25 |
Online | Online | Uniformity characterization of SiC, GaN, α-Ga₂O₃ Schottky contacts using scanning internal photoemission microscopy Yuto Kawasumi (Univ. of Fukui), Fumimasa Horikiri, Noboru Fukuhara (SCIOCS Co.), Tomoyoshi Mishima (Hosei Univ.), Takashi Shinohe (FLOSFIA INC.), Kenji Shiojima (Univ. of Fukui) ED2021-29 CPM2021-63 LQE2021-41 |
Uniformity characterization of Ni/SiC, Ni/GaN, and Cu/Ti/$alpha$-Ga2O3 Schottky contacts was performed by scanning inter... [more] | ED2021-29 CPM2021-63 LQE2021-41 pp.67-70 |
| ED, CPM, LQE | 2021-11-26 16:00 |
Online | Online | Fabrication of Recessed-gate AlGaN/GaN HEMTs using Low-damage Contactless Photo-Electrochemical Etching Masachika Toguchi, Kazuki Miwa (Hokkaido Univ.), Fumimasa Horikiri, Noboru Fukuhara, Yoshinobu Narita, Osamu Ichikawa, Ryota Isono, Takeshi Tanaka (SCIOCS), Taketomo Sato (Hokkaido Univ.) ED2021-34 CPM2021-68 LQE2021-46 |
(To be available after the conference date) [more] | ED2021-34 CPM2021-68 LQE2021-46 pp.87-90 |
| LQE, CPM, ED | 2020-11-26 14:10 |
Online | Online | Mapping of Photoelectrochemical Etched Ni/GaN Schottky Contacts Using Scanning Internal Photoemission Microscopy
-- Comparison between n- and p-type GaN samples -- Ryo Matsuda (Univ. of Fukui), Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida, Noboru Fukuhara (SCIOCS), Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Univ. of Fukui) ED2020-9 CPM2020-30 LQE2020-60 |
[more] | ED2020-9 CPM2020-30 LQE2020-60 pp.33-36 |
| ED, MW | 2020-01-31 11:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Simple Photoelectrochemical Etching for Recess Gate GaN HEMT Fumimasa Horikiri, Noboru Fukuhara (SCIOCS), Masachika Toguchi, Kazuki Miwa (Hokaido Univ.), Yoshinobu Narita, Osamu Ichikawa, Ryota Isono, Takeshi Tanaka (SCIOCS), Taketomo Sato (Hokaido Univ.) ED2019-98 MW2019-132 |
Photoelectrochemical (PEC) etching is a promising technology for fabricating GaN devices with low damage. In the simple ... [more] | ED2019-98 MW2019-132 pp.25-28 |
| SDM | 2010-06-22 14:10 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Relationships among Interface Composition, Bonding Structures and MIS Properties at High-k/III-V Interfaces Tetsuji Yasuda, Noriyuki Miyata, Yuji Urabe, Hiroyuki Ishii, Taro Itatani, Tatsuro Maeda (AIST), Hisashi Yamada, Noboru Fukuhara, Masahiko Hata (Sumitomo Chemical), Akihiro Ohtake (NIMS), Takuya Hoshii, Masafumi Yokoyama, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2010-42 |
There has been a significant interest in the III-V channel MISFET technology which expectedly enables performance improv... [more] | SDM2010-42 pp.49-54 |
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