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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2015-10-30
15:00		 Miyagi Niche, Tohoku Univ. Investigation of stacked HfN gate insulator formed by ECR plasma sputtering
Nithi Atthi, Shun-ichiro Ohmi (Tokyo Tech) SDM2015-82		 In this paper, the effects of HfN1.0 interfacial layer (IL) on the electrical characteristics of HfN1.3 layer formed by ... [more] SDM2015-82
pp.57-62
SDM 2014-10-16
16:00		 Miyagi Niche, Tohoku Univ. Electrical characteristics of as-deposited HfN gate insulator formed by ECR plasma sputtering
Nithi Atthi, Shun-ichiro Ohmi (TokyoTech) SDM2014-87		 In this paper, the electrical characteristics of as-deposited HfN high- gate insulator formed by electron-cyclot... [more] SDM2014-87
pp.19-22
SDM 2013-10-17
14:50		 Miyagi Niche, Tohoku Univ. Electrical Properties and Reliability of Ultrathin HfN Gate Insulator Formed on Si(100) and Si(110)
Nithi Atthi, Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) SDM2013-89		  [more] SDM2013-89
pp.5-9
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