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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, SDM 2009-07-16
15:50
Tokyo Tokyo Institute of Technology The Study of Mobility-Tinv Trade-off in Deeply Scaled High-k/Metal Gate Devices and Scaling Design Guideline for 22nm-node Generation
Masakazu Goto, Shigeru Kawanaka, Seiji Inumiya, Naoki Kusunoki, Masumi Saitoh, Kosuke Tatsumura, Atsuhiro Kinoshita, Satoshi Inaba, Yoshiaki Toyoshima (Toshiba) SDM2009-107 ICD2009-23
The trade-off between Tinv scaling and carrier mobility () degradation in deeply scaled HK/MG nMOSFETs has been ... [more] SDM2009-107 ICD2009-23
pp.53-56
ICD 2007-04-13
09:10
Oita   Floating Body RAM Technology and its Scalability to 32nm Node
Hiroomi Nakajima, Naoki Kusunoki, Tomoaki Shino (Toshiba), Tomoki Higashi (TOSMEC), Takashi Ohsawa, Katsuyuki Fujita, Nobuyuki Ikumi, Fumiyoshi Matsuoka, Ryo Fukuda, Yohji Watanabe, Yoshihiro Minami (Toshiba), Atsushi Sakamoto (TJ), Jun Nishimura, Takeshi Hamamoto, Akihiro Nitayama (Toshiba) ICD2007-10
Technologies and improved performance of the Floating Body RAM are demonstrated. Reducing SOI thickness to 43nm, a 16Mb ... [more] ICD2007-10
pp.53-58
ICD 2006-04-13
11:35
Oita Oita University Technology development of 128Mb-FBC(Floating Body Cell) Memory by 90nm node CMOS process
Hiroomi Nakajima, Yoshihiro Minami, Tomoaki Shino (SoC Center, Toshiba), Atsushi Sakamoto (TJ), Tomoki Higashi (TOSMEC), Naoki Kusunoki, Katsuyuki Fujita, Kosuke Hatsuda, Takashi Ohsawa, Nobutoshi Aoki, Hiroyoshi Tanimoto, Mutsuo Morikado, Kazumi Inoh, Takeshi Hamamoto, Akihiro Nitayama (SoC Center, Toshiba)
A 128Mb SOI DRAM with FBC (Floating Body Cell) has been successfully developed for the first time. In order to realize f... [more] ICD2006-5
pp.25-30
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