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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
CPM, LQE, ED |
2013-11-28 14:45 |
Osaka |
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Characterization of low-carrier thick n-GaN Schottky diodes on GaN free-standing substrates Kenji Shiojima, Yuhei Kihara, Toshichika Aoki (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Metal) ED2013-71 CPM2013-130 LQE2013-106 |
We fabricated and characterized low-Si-doped thick GaN Schottky diodes on GaN substrates with varied C-doping concentrat... [more] |
ED2013-71 CPM2013-130 LQE2013-106 pp.35-38 |
CPM, LQE, ED |
2013-11-28 15:10 |
Osaka |
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AC Operation of Low-Mg-Doped p-GaN Schottky Diodes Kenji Shiojima, Toshichika Aoki (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Metal) ED2013-72 CPM2013-131 LQE2013-107 |
Current-voltage (I-V) characteristics with variations of voltage sweep speed (vsweep) and changing sweep directions, and... [more] |
ED2013-72 CPM2013-131 LQE2013-107 pp.39-42 |
ED |
2012-07-26 15:25 |
Fukui |
Fukui University |
Effect of ICP Etching on p-type GaN Schottky Contacts Toshifumi Takahashi (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Cable), Kazuki Nomoto (Univ. of Notre Dame), Kenji Shiojima (Univ. of Fukui) ED2012-45 |
Low-Mg-doped p-GaN Schottky contacts were applied to evaluate inductive coupled plasma (ICP) etching damages. The ICP ... [more] |
ED2012-45 pp.21-24 |
ED |
2012-07-26 15:50 |
Fukui |
Fukui University |
Electrical Characteristics of Surface Stoichiometry Controlled p-GaN Schottky Contacts Toshifumi Takahashi (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Cable), Takashi Kajiwara, Satoru Tanaka (Kyushu Univ.), Kenji Shiojima (Univ. of Fukui) ED2012-46 |
Experimental results of electrical characteristics of Au/Ni Schottky contacts formed on three kinds of p-GaN layers, whi... [more] |
ED2012-46 pp.25-30 |
ED, MW |
2012-01-11 14:05 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
Photon-recycling GaN p+n Diodes Kazuhiro Mochizuki (Hitachi, Ltd.), Kazuki Nomoto, Yoshitomo Hatakeyama, Hideo Katayose (Hosei Univ.), Tomoyoshi Mishima, Naoki Kaneda, Tadayoshi Tsuchiya (Hitachi Cable, Ltd.), Akihisa Terano, Takashi Ishigaki, Tomonobu Tsuchiya, Ryuta Tsuchiya (Hitachi, Ltd.), Tohru Nakamura (Hosei Univ.) ED2011-125 MW2011-148 |
Photon recycling was used to increase ionization of Mg in GaN p+n diodes by reducing anode radius down to 20 microns. Th... [more] |
ED2011-125 MW2011-148 pp.35-40 |
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