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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, CPM, SDM 2009-05-15
14:15
Aichi Satellite Office, Toyohashi Univ. of Technology Electrochemical oxidation of GaN for surface control structure
Naohisa Harada, Nanako Shiozaki, Tamotsu Hashizume (hokkaido Univ.) ED2009-35 CPM2009-25 SDM2009-25
 [more] ED2009-35 CPM2009-25 SDM2009-25
pp.91-94
ED, MW 2008-01-16
13:25
Tokyo Kikai-Shinko-Kaikan Bldg. Surface passivation of GaN using electorchemical process
Nanako Shiozaki, Tamotsu Hashizume (Hokkaido Univ.) ED2007-207 MW2007-138
The oxidation condition of n-GaN by wet chemical process was optimized. The bias voltage for oxidation was decided by cy... [more] ED2007-207 MW2007-138
pp.7-10
ED 2007-06-16
10:10
Toyama Toyama Univ. Anodic oxidation on n-GaN surface using photoelectrochemical process
Nanako Shiozaki, Tamotsu Hashizume (Hokkaido Univ.) ED2007-42
This paper reports the feasibility of oxidation on n-GaN surface using photoelectrochemical process in a mixed solution ... [more] ED2007-42
pp.61-65
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