Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, ICD, ITE-IST [detail] |
2023-08-02 13:15 |
Hokkaido |
Hokkaido Univ. Multimedia Education Bldg. 3F (Primary: On-site, Secondary: Online) |
[Invited Talk]
A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode for 3D Integrated Devices Masaharu Kobayashi, Kaito Hikake, Zhuo Li, Junxiang Hao, Chitra Pandy, Takuya Saraya, Toshiro Hiramoto (Univ. Tokyo), Takanori Takahashi, Mutsunori Uenuma, Yukiharu Uraoka (NAIST) SDM2023-45 ICD2023-24 |
(To be available after the conference date) [more] |
SDM2023-45 ICD2023-24 pp.45-49 |
SDM, OME |
2021-04-23 16:20 |
Okinawa |
Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
[Invited Talk]
Hot Carrier Effect in Oxide Thin Film Transistors Yukiharu Uraoka, Takanori Takahashi, Mami Fujii, Juan Paolo Bermundo, Mutsunori Uenuma (NAIST) SDM2021-6 OME2021-6 |
[more] |
SDM2021-6 OME2021-6 pp.22-25 |
EID, SDM, ITE-IDY [detail] |
2020-12-02 14:00 |
Online |
Online |
Improvement of Al2O3/GaN MOS Characteristics using Bilayer Structure Sho Sonehara, Mutsunori Uenuma, Yukiharu Uraoka (NAIST) EID2020-9 SDM2020-43 |
[more] |
EID2020-9 SDM2020-43 pp.35-36 |
SDM, EID, ITE-IDY [detail] |
2019-12-24 13:25 |
Nara |
NAIST |
Evaluate interface charges and bulk oxide charges on SiO2/GaN MOS structure before and after post-metallization annealing Masaaki Furukawa, Mutsunori Uenuma, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) EID2019-5 SDM2019-80 |
[more] |
EID2019-5 SDM2019-80 pp.1-4 |
EID, SDM, ITE-IDY [detail] |
2018-12-25 14:30 |
Kyoto |
|
Dependence of thermoelectric properties and structure of Ga-Sn-O thin films on annealing Yoku Ikeguchi, Tatsuya Aramaki (Ryukoku Univ.), Kenta Umeda, Mutsunori Uenuma (NAIST), Daichi Koretomo, Yusaku Magari, Mamoru Furuta (KUT), Mutsumi Kimura (Ryukoku Univ.) |
[more] |
|
EID, SDM, ITE-IDY [detail] |
2018-12-25 14:45 |
Kyoto |
|
Evaluation of Ga-Sn-O thin film thermoelectric conversion devise made by Mist CVD Tatsuya Aramaki, Ryuki Nomura, Yoku Ikeguchi, Tokiyoshi Matsuda (Ryukoku Univ.), Kenta Umeda, Mutsunori Uenuma (NAIST), Mutsumi Kimura (Ryukoku Univ.) |
[more] |
|
SDM, EID |
2017-12-22 13:15 |
Kyoto |
Kyoto University |
Flexible Device Applications Using GaSnO Thin Films Ryo Takagi (Ryukoku Univ.), Kenta Umeda (NAIST), Tokiyoshi Matsuda (Ryukoku Univ.), Mutsunori Uenuma (NAIST), Mutsumi Kimura (Ryukoku Univ.) EID2017-16 SDM2017-77 |
Thin-film transistors (TFTs) and thermoelectric conversion elements were evaluated by using an amorphous Ga-Sn-O (a-GTO)... [more] |
EID2017-16 SDM2017-77 pp.23-28 |
SDM, EID |
2017-12-22 13:30 |
Kyoto |
Kyoto University |
Seebeck effect measurement of rare metal free oxide semiconductor Ryuki Nomura, Tatsuya Aramaki, Tokiyoshi Matsuda (Ryukoku Univ.), Kenta Umeda, Mutsunori Uenuma (NAIST), Mutsumi Kimura (Ryukoku Univ.) EID2017-17 SDM2017-78 |
It is thought that if we convert thermal energy to electric energy efficiently, we can reduce the amount of oil used. Ho... [more] |
EID2017-17 SDM2017-78 pp.29-34 |
SDM, EID |
2016-12-12 15:45 |
Nara |
NAIST |
Thermoelectric Properties of amorphous-InGaZnO Thin Film Yuki Tawa, Mutsunori Uenuma, Yuta Fujimoto, Daiki Senaha, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) EID2016-25 SDM2016-106 |
[more] |
EID2016-25 SDM2016-106 pp.71-74 |
EID, SDM |
2015-12-14 11:30 |
Kyoto |
Ryukoku University, Avanti Kyoto Hall |
Memory Application of Ultrafine FET utilizing Supramolecular Protein Takahiko Ban, Mutsunori Uenuma (NAIST), Shinji Migita (AIST), Yasuaki Ishikawa, Ichiro Yamashita, Yukiharu Uraoka (NAIST) EID2015-11 SDM2015-94 |
Metal nanoparticles (NPs) embedded in junctionless field-effect transistors (JL-FETs) with a length of 3.6 nm is fabrica... [more] |
EID2015-11 SDM2015-94 pp.9-12 |
SDM |
2015-06-19 15:50 |
Aichi |
VBL, Nagoya Univ. |
Fully compatible resistive random access memory with amorphous InGaZnO based thin film transistor fabrication process Keisuke Kado, Mutsunori Uenuma, Kyouhei Nabesaka, Kriti Sharma, Haruka Yamazaki, Satoshi Urakawa, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2015-52 |
a-InGaZnO based non-volatile memories were fabricated as resistive random access memory (ReRAM) for use in System on Pan... [more] |
SDM2015-52 pp.75-80 |
SDM |
2013-06-18 13:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Resistive Memory Effect of Bio-nanoparticle in Si Oxide Film Mutsunori Uenuma (Osaka Univ.), Takahiko Ban, Ichiro Yamashita, Yukiharu Uraoka (NAIST) SDM2013-55 |
We demonstrated a novel biological process based on a use of a supra molecular protein as a reaction cage in which to fo... [more] |
SDM2013-55 pp.57-60 |
SDM |
2012-06-21 10:00 |
Aichi |
VBL, Nagoya Univ. |
Nanodot-type Floating Gate Memory with High-density Nanodot Array Formed Utilizing Listeria Dps Hiroki Kamitake, Kosuke Ohara, Mutsunori Uenuma, Bin Zheng, Yasuaki Ishikawa, Ichiro Yamashita, Yukiharu Uraoka (NAIST) SDM2012-46 |
Nanodot-type floating gate memory (NFGM), which has a two dimensional array of nanodots as a floating gate, has attracte... [more] |
SDM2012-46 pp.17-21 |
SDM, OME |
2012-04-27 14:40 |
Okinawa |
Okinawa-Ken-Seinen-Kaikan Bldg. |
Effects of Guided Filament Formation in NiO-ReRAM Utilizing Bio Nano Process
-- Control of defects in thin films -- Mutsunori Uenuma, Takahiko Ban, Zheng Bin, Ichiro Yamashita, Yukiharu Uraoka (NAIST) SDM2012-4 OME2012-4 |
Controllable positioning of conductive filament in resistive memory is demonstrated using gold nanoparticles (GNPs). A G... [more] |
SDM2012-4 OME2012-4 pp.15-20 |
SDM |
2010-06-22 17:10 |
Tokyo |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
Resistive Memory utilizing Ferritin Protein with Nano Particle
-- Control of a Current Path using Metal Nano Particle -- Mutsunori Uenuma, Kentaro Kawano (NAIST/CREST JST), Shigeo Yoshii, Ichiro Yamashita (NAIST/Panasonic Corp.), Yukiharu Uraoka (NAIST/CREST JST) SDM2010-48 |
This study reports controlled single conductive path in ReRAM by embedding metal nano particles (NPs) in NiO film. Nano ... [more] |
SDM2010-48 pp.85-88 |