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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 15 of 15  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ICD, ITE-IST [detail] 2023-08-02
13:15
Hokkaido Hokkaido Univ. Multimedia Education Bldg. 3F
(Primary: On-site, Secondary: Online)
[Invited Talk] A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode for 3D Integrated Devices
Masaharu Kobayashi, Kaito Hikake, Zhuo Li, Junxiang Hao, Chitra Pandy, Takuya Saraya, Toshiro Hiramoto (Univ. Tokyo), Takanori Takahashi, Mutsunori Uenuma, Yukiharu Uraoka (NAIST) SDM2023-45 ICD2023-24
(To be available after the conference date) [more] SDM2023-45 ICD2023-24
pp.45-49
SDM, OME 2021-04-23
16:20
Okinawa Okinawaken Seinen Kaikan
(Primary: On-site, Secondary: Online)
[Invited Talk] Hot Carrier Effect in Oxide Thin Film Transistors
Yukiharu Uraoka, Takanori Takahashi, Mami Fujii, Juan Paolo Bermundo, Mutsunori Uenuma (NAIST) SDM2021-6 OME2021-6
 [more] SDM2021-6 OME2021-6
pp.22-25
EID, SDM, ITE-IDY [detail] 2020-12-02
14:00
Online Online Improvement of Al2O3/GaN MOS Characteristics using Bilayer Structure
Sho Sonehara, Mutsunori Uenuma, Yukiharu Uraoka (NAIST) EID2020-9 SDM2020-43
 [more] EID2020-9 SDM2020-43
pp.35-36
SDM, EID, ITE-IDY [detail] 2019-12-24
13:25
Nara NAIST Evaluate interface charges and bulk oxide charges on SiO2/GaN MOS structure before and after post-metallization annealing
Masaaki Furukawa, Mutsunori Uenuma, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) EID2019-5 SDM2019-80
 [more] EID2019-5 SDM2019-80
pp.1-4
EID, SDM, ITE-IDY [detail] 2018-12-25
14:30
Kyoto   Dependence of thermoelectric properties and structure of Ga-Sn-O thin films on annealing
Yoku Ikeguchi, Tatsuya Aramaki (Ryukoku Univ.), Kenta Umeda, Mutsunori Uenuma (NAIST), Daichi Koretomo, Yusaku Magari, Mamoru Furuta (KUT), Mutsumi Kimura (Ryukoku Univ.)
 [more]
EID, SDM, ITE-IDY [detail] 2018-12-25
14:45
Kyoto   Evaluation of Ga-Sn-O thin film thermoelectric conversion devise made by Mist CVD
Tatsuya Aramaki, Ryuki Nomura, Yoku Ikeguchi, Tokiyoshi Matsuda (Ryukoku Univ.), Kenta Umeda, Mutsunori Uenuma (NAIST), Mutsumi Kimura (Ryukoku Univ.)
 [more]
SDM, EID 2017-12-22
13:15
Kyoto Kyoto University Flexible Device Applications Using GaSnO Thin Films
Ryo Takagi (Ryukoku Univ.), Kenta Umeda (NAIST), Tokiyoshi Matsuda (Ryukoku Univ.), Mutsunori Uenuma (NAIST), Mutsumi Kimura (Ryukoku Univ.) EID2017-16 SDM2017-77
Thin-film transistors (TFTs) and thermoelectric conversion elements were evaluated by using an amorphous Ga-Sn-O (a-GTO)... [more] EID2017-16 SDM2017-77
pp.23-28
SDM, EID 2017-12-22
13:30
Kyoto Kyoto University Seebeck effect measurement of rare metal free oxide semiconductor
Ryuki Nomura, Tatsuya Aramaki, Tokiyoshi Matsuda (Ryukoku Univ.), Kenta Umeda, Mutsunori Uenuma (NAIST), Mutsumi Kimura (Ryukoku Univ.) EID2017-17 SDM2017-78
It is thought that if we convert thermal energy to electric energy efficiently, we can reduce the amount of oil used. Ho... [more] EID2017-17 SDM2017-78
pp.29-34
SDM, EID 2016-12-12
15:45
Nara NAIST Thermoelectric Properties of amorphous-InGaZnO Thin Film
Yuki Tawa, Mutsunori Uenuma, Yuta Fujimoto, Daiki Senaha, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) EID2016-25 SDM2016-106
 [more] EID2016-25 SDM2016-106
pp.71-74
EID, SDM 2015-12-14
11:30
Kyoto Ryukoku University, Avanti Kyoto Hall Memory Application of Ultrafine FET utilizing Supramolecular Protein
Takahiko Ban, Mutsunori Uenuma (NAIST), Shinji Migita (AIST), Yasuaki Ishikawa, Ichiro Yamashita, Yukiharu Uraoka (NAIST) EID2015-11 SDM2015-94
Metal nanoparticles (NPs) embedded in junctionless field-effect transistors (JL-FETs) with a length of 3.6 nm is fabrica... [more] EID2015-11 SDM2015-94
pp.9-12
SDM 2015-06-19
15:50
Aichi VBL, Nagoya Univ. Fully compatible resistive random access memory with amorphous InGaZnO based thin film transistor fabrication process
Keisuke Kado, Mutsunori Uenuma, Kyouhei Nabesaka, Kriti Sharma, Haruka Yamazaki, Satoshi Urakawa, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2015-52
a-InGaZnO based non-volatile memories were fabricated as resistive random access memory (ReRAM) for use in System on Pan... [more] SDM2015-52
pp.75-80
SDM 2013-06-18
13:55
Tokyo Kikai-Shinko-Kaikan Bldg. Resistive Memory Effect of Bio-nanoparticle in Si Oxide Film
Mutsunori Uenuma (Osaka Univ.), Takahiko Ban, Ichiro Yamashita, Yukiharu Uraoka (NAIST) SDM2013-55
We demonstrated a novel biological process based on a use of a supra molecular protein as a reaction cage in which to fo... [more] SDM2013-55
pp.57-60
SDM 2012-06-21
10:00
Aichi VBL, Nagoya Univ. Nanodot-type Floating Gate Memory with High-density Nanodot Array Formed Utilizing Listeria Dps
Hiroki Kamitake, Kosuke Ohara, Mutsunori Uenuma, Bin Zheng, Yasuaki Ishikawa, Ichiro Yamashita, Yukiharu Uraoka (NAIST) SDM2012-46
Nanodot-type floating gate memory (NFGM), which has a two dimensional array of nanodots as a floating gate, has attracte... [more] SDM2012-46
pp.17-21
SDM, OME 2012-04-27
14:40
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Effects of Guided Filament Formation in NiO-ReRAM Utilizing Bio Nano Process -- Control of defects in thin films --
Mutsunori Uenuma, Takahiko Ban, Zheng Bin, Ichiro Yamashita, Yukiharu Uraoka (NAIST) SDM2012-4 OME2012-4
Controllable positioning of conductive filament in resistive memory is demonstrated using gold nanoparticles (GNPs). A G... [more] SDM2012-4 OME2012-4
pp.15-20
SDM 2010-06-22
17:10
Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Resistive Memory utilizing Ferritin Protein with Nano Particle -- Control of a Current Path using Metal Nano Particle --
Mutsunori Uenuma, Kentaro Kawano (NAIST/CREST JST), Shigeo Yoshii, Ichiro Yamashita (NAIST/Panasonic Corp.), Yukiharu Uraoka (NAIST/CREST JST) SDM2010-48
This study reports controlled single conductive path in ReRAM by embedding metal nano particles (NPs) in NiO film. Nano ... [more] SDM2010-48
pp.85-88
 Results 1 - 15 of 15  /   
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