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ED
,
CPM
,
LQE
2006-10-06
14:55
Kyoto
GaN/InAlN/GaN Hetero Barrier Varactor Diodes
Nobuhisa Tanuma
,
Minoru Kubota
,
Munecazu Tacano
(
Meisei Univ.
)
The capacitance-voltage (C-V) characteristics of In0.17Al0.83N/GaN heterostructure barrier varactors (HBV) grown by meta...
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ED2006-171
CPM2006-108
LQE2006-75
pp.103-106
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