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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ICD 2011-08-26
Toyama Toyama kenminkaikan A Dynamic body-biased SRAM with Asymmetric Halo Implant MOSFETs
Makoto Yabuuchi, Yasumasa Tsukamoto, Hidehiro Fujiwara, Koji Maekawa, Motoshige Igarashi, Koji Nii (Renesas) SDM2011-93 ICD2011-61
In this paper, we propose an SRAM macro that realizes 0.5V operation by combining a device technique with simple design ... [more] SDM2011-93 ICD2011-61
ICD, SDM 2006-08-18
Hokkaido Hokkaido University A 65 nm Ultra-High-Density Dual-port SRAM with 0.71um2 8T-cell for SoC
Susumu Imaoka (Renesas Design), Koji Nii (Renesas Technology), Yasuhiro Masuda (Renesas Design), Makoto Yabuuchi, Yasumasa Tsukamoto, Shigeki Ohbayashi, Motoshige Igarashi, Kazuo Tomita, Nobuo Tsuboi, Hiroshi Makino, Koichiro Ishibashi, Hirofumi Shinohara (Renesas Technology)
We propose a new access scheme of synchronous dual-port (DP) SRAM that minimizes area of 8T-DP-cell and keeps cell stabi... [more] SDM2006-148 ICD2006-102
ICD, SDM 2006-08-18
Hokkaido Hokkaido University A 65 nm SoC Embedded 6T-SRAM Design for Manufacturing with Read and Write Cell Stabilizing Circuits
Makoto Yabuuchi, Shigeki Ohbayashi, Koji Nii, Yasumasa Tsukamoto (Renesas Technology), Susumu Imaoka (Renesas Design), Motoshige Igarashi, Masahiko Takeuchi, Hiroshi Kawashima, Hiroshi Makino, Yasuo Yamaguchi, Kazuhiro Tsukamoto, Masahide Inuishi, Koichiro Ishibashi, Hirofumi Shinohara (Renesas Technology)
 [more] SDM2006-151 ICD2006-105
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