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Committee Date Time Place Paper Title / Authors Abstract Paper #
RCS 2015-06-26
Hokkaido Hokkaido Univ. Considerations for New Entries of OFDM with 256- and 1024-QAM in Mobile Systems
Mitsutoshi Nakamura, Hiroyuki Otsuka (Kogakuin Univ.) RCS2015-97
This paper presents the transmission performance of OFDM using a higher order modulation scheme such as 256- and 1024-QA... [more] RCS2015-97
SDM, VLD 2006-09-26
Tokyo Kikai-Shinko-Kaikan Bldg. Improvement of Drive Current in Bulk-FinFET using Full 3D Process/Device Simulations
Takahisa Kanemura, Takashi Izumida, Nobutoshi Aoki, Masaki Kondo, Sanae Ito, Toshiyuki Enda, Kimitoshi Okano, Hirohisa Kawasaki, Atsushi Yagishita, Akio Kaneko, Satoshi Inaba, Mitsutoshi Nakamura, Kazunari Ishimaru, Kyoichi Suguro, Kazuhiro Eguchi (Toshiba Corp.)
We discussed the optimization of structure of bulk-FinFETs and ion implantations by using 3-D process and device simulat... [more] VLD2006-43 SDM2006-164
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