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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, LSJ 2015-05-21
Ishikawa   Four-wavelength Stimulated Emission from 1.3-um External-Cavity Quantum-Dot Laser
Nami Yasuoka (University of Tokyo), Mitsuru Ishida, Kan Takada, Masaomi Yamaguchi, Kazuya Takemoto, Tsuyoshi Yamamoto (Fujitsu Labs), Yasuhiko Arakawa (University of Tokyo) LQE2015-4
 [more] LQE2015-4
EMD, OPE, LQE, CPM 2010-08-27
Hokkaido Chitose Arcadia Plaza Improved performances of 1.3-um InAs/GaAs high-density quantum dot lasers
Yu Tanaka (Fujitsu labs./Fujitsu/QD laser/PETRA), Kan Takada, Mitsuru Ishida (NanoQuine, Tokyo univ.), Takeshi Matsumoto, Hai-Zhi Song, Mitsuru Ekawa (Fujitsu Labs), Yoshiaki Nakata (Fujitsu Labs/QD laser), Tsuyoshi Yamamoto (Fujitsu labs/Fujitsu/PETRA), Masaomi Yamaguchi, Kenichi Nishi, Mitsuru Sugawara (QD laser), Yasuhiko Arakawa (IIS, Tokyo univ.) EMD2010-60 CPM2010-76 OPE2010-85 LQE2010-58
 [more] EMD2010-60 CPM2010-76 OPE2010-85 LQE2010-58
LQE, OPE 2009-06-19
Tokyo Kikai-Shinko-Kaikan Bldg. 1.3 um InAs/GaAs quantum dot lasers -- Toward single mode lasing and high speed modulatoin --
Yu Tanaka (Fujitsu Labs/Fujitsu Ltd/QDL/OITDA), Kan Takada, Mitsuru Ishida (Univ. of Tokyo.), Yasunari Maeda (QD laser inc.), Takeshi Matsumoto, Mitsuru Ekawa, Hai-Zhi Song (Futjitsu Labs.), Masaomi Yamaguchi (QD laser inc.), Yoshiaki Nakata (Fujitsu Labs/QDL.), Kenichi Nishi (QD laser inc.), Tsuyoshi Yamamoto (Fujitsu Labs/Fujitsu Ltd/OITDA), Mitsuru Sugawara (Fujitsu Labs/Fujitsu Ltd/QDL/OITDA), Yasuhiko Arakawa (Univ. of Tokyo.) OPE2009-29 LQE2009-32
 [more] OPE2009-29 LQE2009-32
OPE, LQE 2006-06-30
Tokyo Kikai-Shinko-Kaikan Bldg. 1.3μm p-doped quantum dot lasers -- low driving current temperature stable 10 Gb/s direct modulation between 20℃ and 90℃ --
Mitsuru Ishida, Nobuaki Hatori (The Univ. of Tokyo), Koji Otsubo, Tsuyoshi Yamamoto (Fujitsu and OITDA), Yoshiaki Nakata, Hiroji Ebe (The Univ. of Tokyo), Mitsuru Sugawara (Fujitsu and OITDA), Yasuhiko Arakawa (The Univ. of Tokyo)
Various distinguishable characteristics of quantum dot lasers have been achieved recently. In this report, we realized d... [more] OPE2006-18 LQE2006-22
LQE 2004-12-03
Tokyo Kikai-Shinko-Kaikan Bldg. 1.3 μm InAs/GaAs quantum dot lasers with AlGaAs cladding layer grown at low temperature by MOCVD
Jun Tatebayashi, Nobuaki Hatori, Mitsuru Ishida, Hiroji Ebe (Univ. of Tokyo), Hisao Sudou, Akito Kuramata (Fujitsu Lab.), Mitsuru Sugawara, Yasuhiko Arakawa (Univ. of Tokyo)
Quantum-dot lasers are recently of practical concern since quantum dots can extend the lasing wavelengths of GaAs-based ... [more] LQE2004-126
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