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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2011-10-27
09:55		 Fukui Fukui Univ. Preparation of SiC MOS structure using SiO2 Layer deposited by Thermal Decomposition of TEOS
Mitsunori Hemmi, Yuya Iguchi, Takashi Sakai, Akihiko Sugita, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2011-119		 A oxide layer was deposited on a SiC surface by thermal chemical vapor deposition as a source material TEOS. After the d... [more] CPM2011-119
pp.51-54
CPM 2011-08-10
13:50		 Aomori   Direct Nitridation of SiC Surface and Characterization of Nitride/SiC Interface
Takashi Sakai, Mitsunori Hemmi, Yusuke Murata, Shinichiro Suzuki, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2011-58		 A nitride layer was formed on a SiC surface by direct nitridation method to use an interfacial layer of the SiC MIS stru... [more] CPM2011-58
pp.11-14
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