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 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, EID 2014-12-12
11:00		 Kyoto Kyoto University Irradiation Effect of Carbon-Based Polyatomic Ions on Si Substrate
Mitsuaki Takeuchi, Kyohei Hayashi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.), Tsutomu Nagayama, Koji Matsuda (Nissin Ion Equipment) EID2014-17 SDM2014-112		 Irradiation damage on Si(100) substrates which were irradiated with C$_{n}$H$_{n}^{+}$($n$=3, 7, 14) and C$_{n}$H$_{2n+1... [more] EID2014-17 SDM2014-112
pp.21-24
SDM 2012-12-07
11:00		 Kyoto Kyoto Univ. (Katsura) Surface Modification of Glass Substrate by Ion Beam Irradiation of Ionic Liquid BMIM-PF6
Mitsuaki Takeuchi, Takuya Hamaguchi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.) SDM2012-119		 Ionic liquids(ILs) are known to be potential solvents for green chemistry in the recent years,
which are molten salt a... [more]		 SDM2012-119
pp.25-30
SDM 2012-12-07
11:15		 Kyoto Kyoto Univ. (Katsura) Molecular mass dependence of irradiation effects on silicon surface by normal hydrocarbon ion beams
Kosuke Imanaka, Mitsuaki Takeuchi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.) SDM2012-120		 Si substrates irradiated with polyatomic ions, which wereC$_{3}$H$_{7}^{+}$，C$_{6}$H$_{13}^{+}$\ and C$_{12}$H$_{25}^{+}... [more] SDM2012-120
pp.31-35
SDM 2010-12-17
15:10		 Kyoto Kyoto Univ. (Katsura) Irradiation Effects of Silicon Surface by Polyatomic Ion Beams
Mitsuaki Takeuchi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.) SDM2010-197		 C$_{3}$H$_{7}^{+}$}\ and C$_{6}$H$_{13}^{+}$\ polyatomic ion beams generated from n-octane were irradiated with 1 keV/CH... [more] SDM2010-197
pp.69-72
SDM 2009-12-04
11:40		 Nara NAIST Si substrate processing by ethanol cluster ion beam technique
Hiroshi Mukai, Hiromichi Ryuto, Mitsuaki Takeuchi, Gikan H. Takaoka (Kyoto Univ.) SDM2009-158		 (Advance abstract in Japanese is available) [more] SDM2009-158
pp.39-41
ED 2008-08-05
09:50		 Shizuoka Sizuoka Univ. Hamamatsu Campus Application of silicon field emitter arrays for space charge compensation of low energy ion beam
Mitsuaki Takeuchi (Innovation Plaza Kyoto, JST), Yasuhito Gotoh, Hiroshi Tsuji (Kyoto Univ.), Shigeki Sakai (Nissin Ion Equipment), Tsunenobu Kimoto, Junzo Ishikawa (Kyoto Univ.) ED2008-119		 We demonstrated a space charge compensation by using a surface-carbonized silicon field emitter array(Si:C-FEA). The Si:... [more] ED2008-119
pp.49-52
 Results 1 - 6 of 6  /   
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