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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW, ED | 2019-01-18 13:00 |
Tokyo | Hitachi, Central Research Lab. | [Invited Lecture]
Ultra-high-speed IC technologies for optical and wireless communications Hideyuki Nosaka, Munehiko Nagatani, Hiroshi Hamada, Teruo Jyo, Hitoshi Wakita, Takuya Tsutsumi, Hiroki Sugiyama, Miwa Mutoh, Minoru Ida, Hideaki Matsuzaki (NTT)  ED2018-84 MW2018-151 |
[more] | ED2018-84 MW2018-151 pp.79-84 |
| OCS, OPE, LQE | 2018-11-12 16:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg (Tokyo) | [Special Invited Talk]
400-Gbps DMT Transmission Using >100-GHz Analog Multiplexer and InP Mach-Zehnder Modulator Hiroshi Yamazaki, Munehiko Nagatani, Hitoshi Wakita, Yoshihiro Ogiso, Masanori Nakamura, Minoru Ida, Toshikazu Hashimoto, Hideyuki Nosaka, Yutaka Miyamoto (NTT) OCS2018-66 OPE2018-95 LQE2018-84 |
We review our latest experimental results presented at ECOC’18 post-deadline session. Using a >100-GHz analog multiplexe... [more] | OCS2018-66 OPE2018-95 LQE2018-84 p.29 |
| ED, MW | 2018-01-25 16:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | RF performance improvement of InP-based Double-Heterojunction Bipolar Transistors by SiC heat-spreading substrate Yuta Shiratori, Takuya Hoshi, Minoru Ida, Hideaki Matsuzaki (NTT) ED2017-96 MW2017-165 |
(To be available after the conference date) [more] | ED2017-96 MW2017-165 pp.15-18 |
| ED, MW | 2014-01-17 13:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Low-Power, Linear Driver Module for InP MZM Hitoshi Wakita, Munehiko Nagatani, Miwa Mutoh, Satoshi Tsunashima, Hiroyuki Fukuyama, Hideyuki Nosaka, Norihide Kashio, Minoru Ida, Kenji Kurishima (NTT) ED2013-130 MW2013-195 |
In this paper, the characteristics of InP MZM driver module are presented. The linear driver IC that was implemented in... [more] | ED2013-130 MW2013-195 pp.115-120 |
| ED, MW | 2012-01-12 10:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Low-Turn-on-Voltage Double Heterojunction Bipolar Transistors with a Narrow-Band-Gap InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition Takuya Hoshi, Hiroki Sugiyama, Haruki Yokoyama, Kenji Kurishima, Minoru Ida (NTT) ED2011-130 MW2011-153 |
Because of the significant increase of data traffic, there is now a strong demand for reducing the power consumptions of... [more] | ED2011-130 MW2011-153 pp.63-68 |
| ED, MW | 2012-01-12 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg | A 60-GS/s Digital-to-Analog Converter using 0.5-um InP HBTs for Optical Communication Systems Munehiko Nagatani, Hideyuki Nosaka, Kimikazu Sano, Koichi Murata, Kenji Kurishima, Minoru Ida (NTT) ED2011-131 MW2011-154 |
High-order multi-level modulation formats, such as 16-QAM and 64-QAM, are promising techniques for constructing beyond-1... [more] | ED2011-131 MW2011-154 pp.69-74 |
| ED, MW | 2012-01-12 11:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Components in 0.5-um-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications Yves Bouvier, Munehiko Nagatani, Kimikazu Sano, Koichi Murata, Kenji Kurishima, Minoru Ida (NTT) ED2011-132 MW2011-155 |
Two basic components for high-speed and low-power applications, a static frequency divider and decision circuit, have be... [more] | ED2011-132 MW2011-155 pp.75-79 |
| MW, ED | 2011-01-14 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | New Stacked Metal-Insulator-Metal Capacitor for future InP-based ICs Applications Takuya Tsutsumi, Suehiro Sugitani, Kazumi Nishimura, Minoru Ida (NTT) ED2010-189 MW2010-149 |
Increasing the capacitance density would be a very effective way of making InP IC chips smaller because capacitors occup... [more] | ED2010-189 MW2010-149 pp.75-80 |
| R | 2009-11-20 14:45 |
Osaka | Emitter - metal - related degradation in InP-based HBTs and its suppression by introducing refractory metal Yoshino K. Fukai, Kenji Kurishima, Norihide Kashio, Minoru Ida, Shoji Yamahata, Takatomo Enoki (NTT Corp.) R2009-43 |
[more] | R2009-43 pp.11-16 |
|
| R, ED, SDM | 2005-11-25 14:25 |
Osaka | Central Electric Club | Highly reliable InP-based HBTs with a ledge structure operating at current density over 2mA/um2 Yoshino K. Fukai, Kenji Kurishima, Minoru Ida, Shoji Yamahata, Takatomo Enoki (NTT Photonics Labs.) |
[more] | R2005-43 ED2005-178 SDM2005-197 pp.31-35 |
| OCS, OPE, LQE | 2005-11-03 17:25 |
Fukuoka | 100-GHz Optoelectric Integrated Circuits using InP HBTs and a UTC-PD Norihide Kashio, Kenji Kurishima, Kimikazu Sano, Minoru Ida, Noriyuki Watanabe, Hiroyuki Fukuyama, Hirohiko Sugahara, Masami Tokumitsu, Takatomo Enoki (NTT) |
We have monolithically integrated InP HBTs and a UTC-PD by a non-selective regrowth technique. The HBT shows an ft of 26... [more] | OCS2005-56 OPE2005-86 LQE2005-94 pp.43-46 |
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