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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2019-10-23
Miyagi Niche, Tohoku Univ. A study on ferroelectric non-doped HfO2 directly deposited on Si(100) substrate by introducing Hf interlayer
Masakazu Kataoka, Masaki Hayashi, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech) SDM2019-54
In this study, we investigated suppression of SiO2 interfacial layer formation by introducing Hf interlayer to realize t... [more] SDM2019-54
SDM 2019-10-23
Miyagi Niche, Tohoku Univ. Investigation of ferroelectric undoped HfO2 formation on Si(100) utilizing post metallization annealing for nonvolatile memory application
Min Gee Kim, Masakazu Kataoka, Masaki Hayashi, Rengie Mark D. Mailig, Shun-ichiro Ohmi (Tokyo Tech.) SDM2019-56
In this study, post metallization annealing (PMA) for the ferroelectric undoped HfO2 deposited on Si(100) was investigat... [more] SDM2019-56
SDM 2019-10-24
Miyagi Niche, Tohoku Univ. Low temperature formation of PdErSi/Si(100) for Schottky barrier source and drain MOSFET applications
Rengie Mark D. Mailig, Yuichiro Aruga, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech) SDM2019-61
In this report, the effects of the TiN encapsulating layer on the low temperature formation of the PdErSi/Si(100) with d... [more] SDM2019-61
SDM 2018-10-18
Miyagi Niche, Tohoku Univ. Thin film formation of ferroelectric undoped HfO2 on Si(100) by RF magnetron sputtering
Min Gee Kim, Rengie Mark D. Mailig, Shun-ichiro Ohmi (Tokyo Tech.) SDM2018-58
In this study, we investigated thin film formation of ferroelectric undoped HfO2 directly deposited on p-Si(100). By po... [more] SDM2018-58
SDM 2018-10-18
Miyagi Niche, Tohoku Univ. Schottky barrier height reduction of Pd2Si/Si(100) diodes by dopant segregation process
Rengie Mark D. Mailig, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech.) SDM2018-59
In this paper, the reduction of the Schottky barrier height (SBH) of Pd2Si/Si(100) diodes by the dopant segregation (DS)... [more] SDM2018-59
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