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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2018-06-25
11:40
Aichi Nagoya Univ. VBL3F Control of SiO2/GaN Interface for High-performance GaN MOSFET
Tauji Hosoi, Takahiro Yamada, Mikito Nozaki (Osaka Univ.), Tokio Takahashi, Hisashi Yamada, Mitsuaki Shimizu (AIST), Akitaka Yoshigoe (JAEA), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2018-18
A high-quality gate insulator together with low interface states is indispensable for GaN-based power MOSFETs. We have r... [more] SDM2018-18
pp.11-14
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