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All Technical Committee Conferences  (All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 16件中 1~16件目  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2017-10-26
13:55
Miyagi   Photoassisted field emission properties of gated silicon field emitter arrays
Hidetaka Shimawaki (Hachinohe Inst. of Tech.), Masayoshi Nagao (AIST), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Mikio Takai (Osaka Univ.) ED2017-37
We present an experimental study of laser-induced electron emission from gated silicon field emitter arrays with submicr... [more] ED2017-37
pp.5-8
ED 2016-10-25
14:40
Mie   Study on the photoresponse of silicon field emitter arrays (II)
Hidetaka Shimawaki (HIT), Masayoshi Nagao (AIST), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Fujio Wakaya, Mikio Takai (Osaka Univ.) ED2016-46
We have fabricated silicon field emitter arrays with submicron gate opening by using etch-back technique and investigate... [more] ED2016-46
pp.13-15
ED 2015-10-23
11:25
Aichi   Study on the photoresponse of silicon field emitter arrays
Hidetaka Shimawaki (Hachinohe Inst. of Tech.), Masayoshi Nagao (AIST), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Fujio Wakaya, Mikio Takai (Osaka Univ.) ED2015-66
 [more] ED2015-66
pp.61-64
ED 2014-10-22
09:25
Hokkaido Hokkaido Univ. (Faculty House Trillium) Effect of Laser irradiation on Electron Emission from Silicon Field Emitter Arrays
Hidetaka Shimawaki (Hachinohe Inst. of Tech.), Masayoshi Nagao (AIST), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Fujio Wakaya, Mikio Takai (Osaka Univ.) ED2014-69
The field emission properties of silicon field emitter arrays with submicron gate aperture have been investigated under ... [more] ED2014-69
pp.35-38
ED 2013-10-23
09:00
Hokkaido Enreisou, Hokkaido Univ. Photoassisted Electron Emission from Silicon Cathodes
Hidetaka Shimawaki (Hachinohe Inst. of Tech.), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Fujio Wakaya, Mikio Takai (Osaka Univ.), Tomoya Yoshida, Masayoshi Nagao (AIST) ED2013-57
The photoresponse of electron emission from nanocrystalline silicon based Metal-oxide-semiconductor (MOS) cathodes and g... [more] ED2013-57
pp.29-32
ED 2013-10-23
10:25
Hokkaido Enreisou, Hokkaido Univ. Electron emission from pyroelectric crystals excited using IR laser light and its X-ray source application
Satoshi Abo, Kosuke Nakahama, Michiaki Takahashi, Fujio Wakaya, Mikio Takai (Osaka Univ.) ED2013-60
Electron emission from a pyroelectric crystal excited using infrared laser light and its X-ray source application have b... [more] ED2013-60
pp.41-45
ED 2012-11-19
14:25
Osaka Osaka Univ. Nakanoshima Center Fabrication of graphene edge emitters and their field emission properties
Katsuhisa Murakami (Univ. Tsukuba), Hisato Yamaguchi (Rutgers Univ.), Fujio Wakaya, Mikio Takai (Osaka Univ.), Manish Chhowalla (Rutgers Univ.) ED2012-55
The electron emission properties of thin edges of reduced graphene oxide (rGO) were investigated by field emission micro... [more] ED2012-55
pp.7-10
ED 2012-11-20
09:55
Osaka Osaka Univ. Nakanoshima Center Effect of light illumination on electron emission from nanocrystalline silicon based MOS cathodes
Hidetaka Shimawaki (HIT), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Fujio Wakaya, Mikio Takai (Osaka Univ.) ED2012-61
We investigate the effect of laser illumination on electron emission from nc-Si based Metal-oxide-semiconductor (MOS) ca... [more] ED2012-61
pp.37-40
ED 2012-11-20
10:20
Osaka Osaka Univ. Nakanoshima Center Observation of fringelike-electron-emission pattern from triode Pt field emitter fabricated by electron-beam-induced deposition
Tomohisa Kitayama, Satoshi Abo, Fujio Wakaya, Mikio Takai (Osaka Univ.) ED2012-62
A triode Pt field emitter with a gate electrode to control the intensity of a fringelike emission pattern with low gate ... [more] ED2012-62
pp.41-44
ED 2011-10-21
09:00
Aomori   Photoassisted electron emission from nanocrystalline silicon based MOS cathodes
Hidetaka Shimawaki, Yuto Yamazaki (Hachinohe Inst. Technol.), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Fujio Wakaya, Mikio Takai (Osaka Univ.) ED2011-66
Effect of laser illumination on electron emission from nc-Si MOS cathodes using heavy doped p-type Si substrates has bee... [more] ED2011-66
pp.33-36
ED 2011-10-21
09:50
Aomori   Fabrication and Field Emission Properties of Titanium Oxide Nanostructures on Glass Substrate
Fujio Wakaya, Takuo Nakatani, Satoshi Abo, Mikio Takai (Osaka Univ.) ED2011-68
Titanium oxide has unique photocatalytic and photovoltaic properties. Fabrication processes of titanium-oxide nanostruc... [more] ED2011-68
pp.41-45
ED 2011-10-21
10:55
Aomori   Laser-excited electron emission from LiTaO3 and LiNbO3 crystals for X-ray source application
Eiichi Kaga, Kosuke Nakahama, Yoshiya Kisa, Satoshi Abo, Fujio Wakaya, Mikio Takai (Osaka Univ.) ED2011-70
Electron emission current from LiTaO<sub>3</sub> and LiNbO<sub>3</sub> crystals excited by Nd:YLF laser light and X-rays... [more] ED2011-70
pp.53-57
ED 2011-10-21
11:20
Aomori   Development of X-ray source using gated CNT emitter
Tomoya Manabe, Shogo Nitta, Hiroshi Oki, Satoshi Abo, Fujio Wakaya, Mikio Takai (Osaka Univ.) ED2011-71
A pulsed X-ray source using a gated CNT(Carbon Nanotube) emitter has been developed. A CNT emitter with a size of 44 ×50... [more] ED2011-71
pp.59-63
ED 2009-10-15
15:30
Fukui   Observation of fringelike electron emission pattern emitted from Pt field emitter fabricated by focused-ion-beam-induced deposition
Katsuhisa Murakami, Tomohito Matsuo, Fujio Wakaya, Mikio Takai (Osaka Univ.) ED2009-120
Field emission properties and electron emission patterns of Pt filed emitters fabricated by focused-ion-beam-induced dep... [more] ED2009-120
pp.21-25
ED 2008-08-04
13:25
Shizuoka Sizuoka Univ. Hamamatsu Campus Observation of fringelike electron emission pattern from Pt nanocrystalline field emitter fabricated by electron-beam-induced deposition
Katsuhisa Murakami, Shinji Nishihara, Naoki Matsubara, Satoshi Ichikawa, Fujio Wakaya, Mikio Takai (Osaka Univ.) ED2008-110
Pt field emitter with two adjacent emission sites of a gap size of less than 10 nm was fabricated using electron-beam-in... [more] ED2008-110
pp.5-10
ED 2008-08-04
14:15
Shizuoka Sizuoka Univ. Hamamatsu Campus Electron emission from nanocrystalline silicon based MOS chathodes
Hidetaka Shimawaki, Yo Kida (Hachinohe Inst. Tech.), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Katsuhisa Murakami, Fujio Wakaya, Mikio Takai (Osaka Univ.) ED2008-112
Emission characteristics of planar cathodes based on nanocrystalline Si covered with a thin oxide film have been studied... [more] ED2008-112
pp.15-20
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