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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM 2012-02-07
15:15		 Hokkaido   High-Frequency Properties of Si Single-Electron Transistors Fabricated by Pattern-Dependent Oxidation
Hiroto Takenaka, Michito Shinohara, Takafumi Uchida, Masashi Arita (Hokkaido Uni.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Uni.) ED2011-145 SDM2011-162		 Single electron transistor (SET) is a low power device. However, the high frequency operation properties have not been i... [more] ED2011-145 SDM2011-162
pp.19-24
SDM, ED 2011-02-24
10:45		 Hokkaido Hokkaido Univ. Electrical Characteristics of Si Single-Electron Transistor with Single-Carrier Trap Formed by Photo-Irradiation
Michito Shinohara, Yuki Kato, Kei Mikami, Masashi Arita (Hokkaido Univ), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ) ED2010-203 SDM2010-238		 It is well known that step-like current jumps are observed when huge vertical electric field are applied to a Si single-... [more] ED2010-203 SDM2010-238
pp.63-66
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