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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, LQE, CPM 2012-11-30
14:05		 Osaka Osaka City University Fabrication of Si-doped AlGaN multiple-quantum wells by low-pressure MOVPE and its application for deep-UV-light-source
Shunsuke Ochiai, Mayuna Takagi (Mie Univ.), Fumitsugu Fukuyo (Mie Univ. /HAMAMATSU PHOTONICS), Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yuji Kobayashi, Harumasa Yoshida (HAMAMATSU PHOTONICS) ED2012-85 CPM2012-142 LQE2012-113		 AlxGa1-xN alloy has attracted significant attention owing to its emission covering the wavelength range from 210 to 365 ... [more] ED2012-85 CPM2012-142 LQE2012-113
pp.93-96
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