IEICE Technical Committee Submission System
Conference Schedule		 Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (Searched in: All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 4 of 4  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, THz 2017-12-19
15:10		 Miyagi RIEC, Tohoku Univ Temperature Dependence of the Transconductance of a Dual Gate Graphene Field Effect Transistor
Kenta Sugawara, Takayuki Watanabe, Deepika Yadav, Takahiro Komiyama, Yoshiki Fuse (Tohoku Univ.), Maxim Ryzhii (Aizu Univ.), Victor Ryzhii, Hirokazu Fukidome, Maki Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2017-91		 We report on experimental observation of temperature characteristics of a dual gate graphene field effect transisor (DG-... [more] ED2017-91
pp.73-76
ED 2013-12-17
13:30		 Miyagi Research Institute of Electrical Communication Tohoku University [Invited Talk] Novel concepts and technology for terahertz device applications using graphene
Victor Ryzhii, Akira Satou (Tohoku Univ.), Maxim Ryzhii (Univ. of Aizu), Taiichi Otsuji (Tohoku Univ.) ED2013-106		 Recent progress in study on terahertz device applications using graphene will be reviewed. The device concepts exploitin... [more] ED2013-106
pp.91-96
ED, SDM 2010-02-23
11:35		 Okinawa Okinawaken-Seinen-Kaikan Detectors of Terahertz and Infrared Radiation Based on p-i-n Single- and Multiple Graphene Layer Structures
Victor Ryzhii, Maxim Ryzhii (Univ. of Aizu), Taiichi Otsuji (Tohoku Univ.), Vladimir Mitin (Buffalo Univ.) ED2009-209 SDM2009-206		 Detectors of terahertz and infrared radiation based on p-i-n graphene structures utilizing interband transitions are pro... [more] ED2009-209 SDM2009-206
pp.77-80
SDM, ED 2009-02-26
13:30		 Hokkaido Hokkaido Univ. [Invited Talk] Epitaxial Graphene Grown on Si Substrate and Its Applications to Electron Devices
Taiichi Otsuji, Tetsuya Suemitsu, Hyon-Choru Kang, Hiromi Karasawa, Yuu Miyamoto, Hiroyuki Handa, Maki Suemitsu (Tohoku Univ.), Eiichi Sano (Hokkaido Univ.), Maxim Ryzhii, Victor Ryzhii (Univ. of Aizu) ED2008-224 SDM2008-216		 This paper reviews recent advances in graphene material epitaxially grown on Si substrate and its applications to electr... [more] ED2008-224 SDM2008-216
pp.1-6
 Results 1 - 4 of 4  /   
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan