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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 9 of 9  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2015-11-06
11:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Simulation of Dirac Electron Engineering Device Using Strained Graphene
Satofumi Souma, Miku Tanaka, Keisuke Ichihara, Shotaro Sakoda, Kenji Sasaoka, Matsuto Ogawa (Kobe Univ.) SDM2015-89
MOSFET has been scaled down according to the Moore's law. As the channel length gets close to the nanometer-size, howeve... [more] SDM2015-89
pp.29-34
SDM 2014-11-07
11:15
Tokyo Kikai-Shinko-Kaikan Bldg. Quasi-Ballistic Transport Parameters in Si Double-Gate MOSFETs Extracted Using Monte Carlo Method
Hideaki Tsuchiya, Ryoma Ishida (Kobe Univ.), Yoshinari Kamakura, Nobuya Mori (Osaka Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Matsuto Ogawa (Kobe Univ.) SDM2014-105
Recently, we have developed a Monte Carlo simulator for accurately extracting quasi-ballistic transport parameters in MO... [more] SDM2014-105
pp.53-58
SDM 2013-11-15
13:25
Tokyo Kikai-Shinko-Kaikan Bldg. Quantum transport simulation of ultrasmall III-V MOSFETs using Wigner Monte Carlo approach
Masaki Ohmori, Shunsuke Koba, Yosuke Maegawa (Kobe Univ.), Hideaki Tsuchiya (Kobe Univ./JST), Yoshinari Kamakura, Nobuya Mori (Osaka Univ./JST), Matsuto Ogawa (Kobe Univ.) SDM2013-111
In this study, the impact of source-drain (SD) direct tunneling in III-V metal-oxide-semiconductor field-effect transist... [more] SDM2013-111
pp.65-70
QIT
(2nd)
2011-11-21
14:40
Osaka Osaka Univ. Engr. Sci. Sigma Hall (Toyonaka) [Poster Presentation] Theory of Josepshon pi-junction through a ferromagnetic-insulator
Shuhei Nakamura, Satofumi Souma, Matsuto Ogawa (Kobe Univ), Shiro Kawabata (AIST)
We predict an anomalous 0-π transition in Josephson junctions with a ferromagnetic insulator (FI).
Previously it was f... [more]

SDM 2011-11-11
10:25
Tokyo Kikai-Shinko-Kaikan Bldg. Comparisons of Ballistic Device Performances of Si Nanowire and InAs Nanowire FETs based on First-Principles Band Structure Calculation
Naoya Takiguchi, Shunsuke Koba, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.) SDM2011-121
In this paper, we study the band structures of <110>-oriented Si and InAs nanowires based on a first-principles calculat... [more] SDM2011-121
pp.33-38
SDM 2009-11-12
13:40
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Report on 2009 SISPAD (2)
Matsuto Ogawa (Kobe Univ.) SDM2009-137
This report focuses on the quantum devices session and nano-scaled device session
in the 2009 SISPAD held at Hotel Del ... [more]
SDM2009-137
pp.13-17
SDM [detail] 2008-11-14
16:15
Tokyo Kikai-Shinko-Kaikan Bldg. Three-Dimensional Quantum Transport Simulation of Si-Nanowire Transistors
Yoshihiro Yamada, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.) SDM2008-182
Si-nanowire transistors (SNWTs) are promising candidates as extremely downscaled MOSFETs for the future Si-VLSIs. To und... [more] SDM2008-182
pp.77-82
SDM [detail] 2008-11-14
16:40
Tokyo Kikai-Shinko-Kaikan Bldg. First-Principles Simulation of Electronic Bandstructures on Nanoscaled-Si Channels with Strain Effects
Tadashi Maegawa, Tsuneki Yamauchi, Takeshi Hara, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.) SDM2008-183
In this paper, we present a comparative computational study on strain effects in Si nanostructures including bulk, thin ... [more] SDM2008-183
pp.83-88
SDM, VLD 2006-09-26
15:50
Tokyo Kikai-Shinko-Kaikan Bldg. Quantum Electron Transport Modeling in Nano-Scale Devices Based on Multiband Non-Equilibrium Green's Funtion Method
Helmy Fitriawan, Satofumi Souma, Matsuto Ogawa, Tanroku Miyoshi (Kobe Univ.)
 [more] VLD2006-49 SDM2006-170
pp.59-63
 Results 1 - 9 of 9  /   
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