Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2015-11-06 11:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Simulation of Dirac Electron Engineering Device Using Strained Graphene Satofumi Souma, Miku Tanaka, Keisuke Ichihara, Shotaro Sakoda, Kenji Sasaoka, Matsuto Ogawa (Kobe Univ.) SDM2015-89 |
MOSFET has been scaled down according to the Moore's law. As the channel length gets close to the nanometer-size, howeve... [more] |
SDM2015-89 pp.29-34 |
SDM |
2014-11-07 11:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Quasi-Ballistic Transport Parameters in Si Double-Gate MOSFETs Extracted Using Monte Carlo Method Hideaki Tsuchiya, Ryoma Ishida (Kobe Univ.), Yoshinari Kamakura, Nobuya Mori (Osaka Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Matsuto Ogawa (Kobe Univ.) SDM2014-105 |
Recently, we have developed a Monte Carlo simulator for accurately extracting quasi-ballistic transport parameters in MO... [more] |
SDM2014-105 pp.53-58 |
SDM |
2013-11-15 13:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Quantum transport simulation of ultrasmall III-V MOSFETs using Wigner Monte Carlo approach Masaki Ohmori, Shunsuke Koba, Yosuke Maegawa (Kobe Univ.), Hideaki Tsuchiya (Kobe Univ./JST), Yoshinari Kamakura, Nobuya Mori (Osaka Univ./JST), Matsuto Ogawa (Kobe Univ.) SDM2013-111 |
In this study, the impact of source-drain (SD) direct tunneling in III-V metal-oxide-semiconductor field-effect transist... [more] |
SDM2013-111 pp.65-70 |
QIT (2nd) |
2011-11-21 14:40 |
Osaka |
Osaka Univ. Engr. Sci. Sigma Hall (Toyonaka) |
[Poster Presentation]
Theory of Josepshon pi-junction through a ferromagnetic-insulator Shuhei Nakamura, Satofumi Souma, Matsuto Ogawa (Kobe Univ), Shiro Kawabata (AIST) |
We predict an anomalous 0-π transition in Josephson junctions with a ferromagnetic insulator (FI).
Previously it was f... [more] |
|
SDM |
2011-11-11 10:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Comparisons of Ballistic Device Performances of Si Nanowire and InAs Nanowire FETs based on First-Principles Band Structure Calculation Naoya Takiguchi, Shunsuke Koba, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.) SDM2011-121 |
In this paper, we study the band structures of <110>-oriented Si and InAs nanowires based on a first-principles calculat... [more] |
SDM2011-121 pp.33-38 |
SDM |
2009-11-12 13:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Report on 2009 SISPAD (2) Matsuto Ogawa (Kobe Univ.) SDM2009-137 |
This report focuses on the quantum devices session and nano-scaled device session
in the 2009 SISPAD held at Hotel Del ... [more] |
SDM2009-137 pp.13-17 |
SDM [detail] |
2008-11-14 16:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Three-Dimensional Quantum Transport Simulation of Si-Nanowire Transistors Yoshihiro Yamada, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.) SDM2008-182 |
Si-nanowire transistors (SNWTs) are promising candidates as extremely downscaled MOSFETs for the future Si-VLSIs. To und... [more] |
SDM2008-182 pp.77-82 |
SDM [detail] |
2008-11-14 16:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
First-Principles Simulation of Electronic Bandstructures on Nanoscaled-Si Channels with Strain Effects Tadashi Maegawa, Tsuneki Yamauchi, Takeshi Hara, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.) SDM2008-183 |
In this paper, we present a comparative computational study on strain effects in Si nanostructures including bulk, thin ... [more] |
SDM2008-183 pp.83-88 |
SDM, VLD |
2006-09-26 15:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Quantum Electron Transport Modeling in Nano-Scale Devices Based on Multiband Non-Equilibrium Green's Funtion Method Helmy Fitriawan, Satofumi Souma, Matsuto Ogawa, Tanroku Miyoshi (Kobe Univ.) |
[more] |
VLD2006-49 SDM2006-170 pp.59-63 |