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 Results 1 - 12 of 12  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, LQE, ED 2016-12-12
Kyoto Kyoto University Temperature Dependence of Forward Current-Voltage Characteristics in Homoepitaxial N-type GaN Schottky Barrier Diodes
Takuya Maeda (Kyoto Univ.), Masaya Okada, Masaki Ueno, Yoshiyuki Yamamoto (Sumitomo electric industries,Ltd.), Masahiro Horita, Jun Suda (Kyoto Univ.) ED2016-59 CPM2016-92 LQE2016-75
 [more] ED2016-59 CPM2016-92 LQE2016-75
WPT 2016-03-08
Kyoto Kyoto Univ. Uji Campus Development of Several Tens of W Class High Power Rectifier with GaN Schottky Barrier Diodes
Takaki Nishimura, Tomohiko Mitani, Naoki Shinohara (Kyoto Univ.), Masaya Okada, Yuusuke Yoshizumi, Masaki Ueno (SEI) WPT2015-87
We aimed to develop high power rectifiers of 2.45 GHz with GaN schottky barrier diodes that had about 100 V of the break... [more] WPT2015-87
Overseas TamKang University, Tamsui Campus Development of High Power Rectifier of 2.45 GHz using GaN Schottky Barrier Diodes with high thermal conductive AlN submounts
Takaki Nishimura, Tomohiko Mitani, Naoki Shinohara (Kyoto Univ.), Masaki Ueno, Masaya Okada, Yuusuke Yoshizumi (SEI)
We aimed to develop a high power rectifier of 2.45 GHz with a GaN schottky diode that had 107 V of the breakdown voltage... [more]
ED, LQE, CPM 2015-11-26
Osaka Osaka City University Media Center Photoresponse of Homoepitaxial N-type GaN Schottky Barrier Diodes
Takuya Maeda (Kyoto Univ.), Masaya Okada (Sumitomo electric industries,Ltd.), Yoshiyuki Yamamoto, Masaki Ueno (Sumitomo electric industries), Masahiro Horita, Jun Suda (Kyoto Univ.) ED2015-74 CPM2015-109 LQE2015-106
 [more] ED2015-74 CPM2015-109 LQE2015-106
WPT 2015-03-25
Kyoto Kyoto Univ. Uji Campus Development of High Power Rectifier with GaN Schottky Diode
Takaki Nishimura, Naoki Shinohara, Tomohiko Mitani (Kyoto Univ.), Masaki Ueno, Yusuke Yoshizumi, Masaya Okada (SEI) WPT2014-102
 [more] WPT2014-102
ED, MW 2014-01-17
Tokyo Kikai-Shinko-Kaikan Bldg. Characteristics of Vertical GaN schottky barrier diodes and Heterojunction-Field-Effect Transistors on Low-Dislocation-Density GaN substrates
Susumu Yoshimoto, Kuniaki Ishihara, Masaya Okada, Kazuhide Sumiyoshi, Hidenori Hirano, Fuminori Mitsuhashi, Yusuke Yoshizumi, Takashi Ishizuka, Makoto Kiyama, Masaki Ueno (Sumitomo Electric) ED2013-124 MW2013-189
Vertical GaN power devices which are fabricated on free-standing GaN substrates are expected for reduction of collapse, ... [more] ED2013-124 MW2013-189
Kanagawa Raiosha, Keio Univ. An Analysis of Driving Characteristics Based on Driving Behavior Sensing Data
Masahiro Tada (Kinki Univ./ATR), Haruo Noma (Ritsumeikan Univ./ATR), Akira Utsumi (ATR), Masaya Okada (Shizuoka Univ.), Kazumi Renge (Tezukayama Univ.) CNR2013-8
 [more] CNR2013-8
ET 2012-10-27
Nagano   Development of Support System for Company Research in Job-hunting
Masaya Okada, Shinobu Hasegawa (JAIST) ET2012-51
The main topic addressed in this paper is to propose an approach which reflects “viewpoints” for company research by gra... [more] ET2012-51
CPM, LQE, ED 2010-11-12
Osaka   Vertical Heterojunction Field-Effect Transistors on Low Dislocation Density GaN Substrates
Masaya Okada, Yu Saitoh, Mitsunori Yokoyama, Ken Nakata, Seiji Yaegassi, Koji Katayama, Masaki Ueno, Makoto Kiyama, Tsukuru Katsuyama, Takao Nakamura (SEI) ED2010-157 CPM2010-123 LQE2010-113
A novel vertical heterojunction field-effect transistors (VHFETs) with re-grown AlGaN/GaN two-dimensional electron gas c... [more] ED2010-157 CPM2010-123 LQE2010-113
PRMU 2008-10-23
Tokushima Tokushima Univ. Automatic Driving Skill Evaluation System Using Wearable Sensors and Its Trial Application to Safe Driving Lecture
Masahiro Tada (ATR), Makoto Segawa (Yamashiro Driving School), Masaya Okada (ATR), Kazumi Renge (Tezukayama Univ./ATR), Kiyoshi Kogure (ATR) PRMU2008-88
 [more] PRMU2008-88
PRMU 2008-02-22
Ibaraki Univ. of Tsukuba A Trial for Measuring Drivers' Behavior at Unsignalized Intersections Using Wireless 3D-Gyro Sensors
Masahiro Tada, Tomoji Toriyama, Masaya Okada (ATR), Tatsuya Sakamoto (OIT/ATR), Futoshi Naya, Haruo Noma (ATR), Kazumi Renge (Tezukayama Univ./ATR), Kiyoshi Kogure (ATR) PRMU2007-232
In Japan, 52.0 percent of collision accidents occur at unsignalized intersections. Therefore developing active safty tec... [more] PRMU2007-232
PRMU, HIP 2006-01-20
Osaka Osaka Univ. Extracting and visualizing awareness in real-world learning activities
Masaya Okada, Tomoji Toriyama (ATR), Yasuyuki Sumi (ATR, Kyoto Univ.), Kenji Mase (ATR, Nagoya University), Kiyoshi Kogure, Norihiro Hagita (ATR)
Outdoor learning in the world brimful with invisible discoveries is an important educational area to encourage a wide sp... [more] PRMU2005-162 HIP2005-132
 Results 1 - 12 of 12  /   
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