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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2008-12-05
14:30		 Kyoto Kyoto University, Katsura Campus, A1-001 Improved Performance of an SiC MOSFET by a Three-Dimensional Gate Structure
Yuichiro Nanen, Hironori Yoshioka, Masato Noborio, Jun Suda, Tsunenobu Kimoto (Kyoto Univ) SDM2008-191		 4H-SiC (0001) MOSFETs with a three-dimensional gate structure, which has side-wall channels on the {11-20} face have bee... [more] SDM2008-191
pp.37-41
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