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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2007-06-16
Toyama Toyama Univ. Ion-Implanted GaN/AlGaN/GaN HEMTs with Extremely Low Gate Leakage Current
Kazuki Nomoto, Taku Tajima (Hosei Univ.), Tomoyoshi Mishima (Hitachi Cable Ltd.), Masataka Satoh, Tohru Nakamura (Hosei Univ.) ED2007-44
We were demonstrated the realization of compatibility of extremely low gate leakage current and low source resistance wi... [more] ED2007-44
ED 2007-06-16
Toyama Toyama Univ. Electrical and structural properties of Al implanted 4H-SiC
Masataka Satoh, Shingo Miyagawa, Takahiro Kudoh, Shohei Nagata, Taku Tajima, Tohru Nakamura (Hosei Univ.) ED2007-45
 [more] ED2007-45
ED, SDM, R 2006-11-24
Osaka Central Electric Club Surface passivation film dependence of 1/f noise characteristic in AlGaN/GaN HEMT
Takanori Matsushima, Masahiro Nakajima, Kazuki Nomoto, Masataka Satoh, Tohru Nakamura (Hosei Univ.)
 [more] R2006-36 ED2006-181 SDM2006-199
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