Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, SDM, CPM |
2024-05-24 16:15 |
Hokkaido |
(Primary: On-site, Secondary: Online) |
Performance Analysis of Wide Bandgap Semiconductor SBD for Microwave Power Transmission Yasuo Ohno, Hiroko Itoh, Tomomi Hiraoka (Laser Systems), Masataka Higashiwaki (Osaka Metropolitan Univ.) |
(To be available after the conference date) [more] |
|
MW, ED |
2021-01-29 13:50 |
Online |
Online |
High-Frequency Characteristics and Delay Time Analysis of β-Ga2O3 MOSFETs Takafumi Kamimura, Yohisaki Nakata, Masataka Higashiwaki (NICT) ED2020-33 MW2020-86 |
Superior RF small-signal characteristics of a current-gain cutoff frequency (fT) of 9 GHz and a maximum oscillation freq... [more] |
ED2020-33 MW2020-86 pp.30-33 |
ED |
2016-07-23 15:05 |
Tokyo |
Tokyo Metropolitan Univ. Minami-Osawa Campus, International House |
Effects of post-deposition anneal on SiO2 layer on Ga2O3 Keita Konishi, Takafumi Kamimura, Man Hoi Wong (NICT), Kohei Sasaki, Akito Kuramata, Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) ED2016-29 |
Ga2O3 is an attractive new oxide semiconductor for next-generation power devices due to its extremely large bandgap of 4... [more] |
ED2016-29 pp.11-15 |
ED |
2016-01-20 11:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
State-of-the-art technology of gallium oxide power devices Masataka Higashiwaki, Man Hoi Wong, Keita Konishi (NICT), Kohei Sasaki (Tamura/NICT), Ken Goto (Tamura/TAT), Kazushiro Nomura, Quang Tu Thieu, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu (TAT), Akito Kuramata, Takekazu Masui, Shigenobu Yamakoshi (Tamura) ED2015-114 |
Gallium oxide (Ga{$_{2}$}O{$_{3}$}) is one of oxide semiconductors and has excellent material properties for power devic... [more] |
ED2015-114 pp.13-18 |
ED |
2015-07-24 15:10 |
Ishikawa |
IT Business Plaza Musashi 5F |
Band alignment at SiO2/β-Ga2O3 interface determined by X-ray photoelectron spectroscopy Keita Konishi, Takafumi Kamimura, Man Hoi Wong (NICT), Kohei Sasaki, Akito Kuramata, Shigenobu Yamakoshi (MURA Corp.), Masataka Higashiwaki (NICT) ED2015-40 |
[more] |
ED2015-40 pp.21-24 |
SDM |
2015-06-19 10:10 |
Aichi |
VBL, Nagoya Univ. |
[Invited Lecture]
Al2O3/Ga2O3 interface structure and its surface orientation dependence Takafumi Kamimura, Daivasigamani Krishnamurthy (NICT), Akito Kuramata, Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) SDM2015-40 |
The interface state densities (Dit) of Al2O3/n-Ga2O3 (010) and Al2O3/n-Ga2O3 ("2" ̅01) were evaluated with Hi-Lo C... [more] |
SDM2015-40 pp.11-16 |
ED |
2014-08-01 15:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. B3-1 |
Band offset at Al2O3/β-Ga2O3 Heterojunctions Takafumi Kamimura (NICT), Kohei Sasaki (Tamura Corp.), Man Hoi Wong, Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co., Ltd.), Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) ED2014-60 |
The band alignment of Al2O3/n-Ga2O3 (010) was investigated by x-ray photoelectron spectroscopy (XPS). With a band gap of... [more] |
ED2014-60 pp.41-46 |
ED, MW |
2014-01-16 11:45 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Depletion-mode gallium oxide metal-oxide-semiconductor field-effect transistors fabricated by using Si-ion implantation Masataka Higashiwaki (NICT), Kohei Sasaki (Tamura/NICT), Man Hoi Wong, Takafumi Kamimura, Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura), Takekazu Masui (Koha), Shigenobu Yamakoshi (Tamura) ED2013-116 MW2013-181 |
Depletion-mode gallium oxide (Ga2O3) MOSFETs were fabricated on single-crystal beta-Ga2O3 (010) substrates. We applied S... [more] |
ED2013-116 MW2013-181 pp.35-39 |
ED |
2013-08-08 17:10 |
Toyama |
University of Toyama |
Characterization of Al2O3/ n-Ga2O3 MOS diodes Takafumi Kamimura, Man Hoi Wong (NICT), Kohei Sasaki (Tamura Corp.), Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co., Ltd.), Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) ED2013-43 |
[more] |
ED2013-43 pp.29-32 |
ED, LQE, CPM |
2012-11-29 13:55 |
Osaka |
Osaka City University |
Pt/β-Ga2O3 Schottky Barrier Diodes Using Single-Crystal β-Ga2O3 Substrates Kohei Sasaki (Tamura Corp./NICT), Masataka Higashiwaki (NICT/JST), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co.), Shigenobu Yamakoshi (Tamura Corp.) ED2012-71 CPM2012-128 LQE2012-99 |
We fabricated gallium oxide ($Ga_2O_3$) Schottky barrier diodes using $\beta-Ga_2O_3$ (010) single crystal substrates pr... [more] |
ED2012-71 CPM2012-128 LQE2012-99 pp.25-28 |
SDM, ED (Workshop) |
2012-06-29 09:15 |
Okinawa |
Okinawa Seinen-kaikan |
[Invited Talk]
New widegap semiconductor Ga2O3 MESFETs and Schottky barrier diodes Masataka Higashiwaki (NICT/JST), Kohei Sasaki (Tamura Corp./NICT), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co., Ltd.), Shigenobu Yamakoshi (Tamura Corp.) |
{$\beta$}-gallium oxide (Ga{$_{2$}}O{$_{3}$}) has excellent material properties for power device applications represente... [more] |
|
ED |
2011-12-14 14:05 |
Miyagi |
Tohoku University |
Small-signal and 30 GHz power characteristics of AlGaN/GaN heterostructure field-effect transistors with thin AlGaN barrier layers
-- Effects of AlGaN barrier thinning -- Masataka Higashiwaki (NICT/JST), Yi Pei, Rongming Chu, Umesh K. Mishra (UCSB) ED2011-102 |
Short-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) with extremely thin AlGaN barrier layers were fabr... [more] |
ED2011-102 pp.13-17 |
ED |
2010-06-17 15:50 |
Ishikawa |
JAIST |
Effects of surface oxidation during device processing on surface barrier height of AlGaN/GaN HFETs Masataka Higashiwaki (NICT/JST/UCSB), Srabanti Chowdhury, Brian L. Swenson, Umesh K. Mishra (UCSB) ED2010-39 |
We investigated effects of surface oxidation by annealing during device process on AlGaN surface barrier height of AlGaN... [more] |
ED2010-39 pp.31-35 |
ED |
2008-12-19 16:20 |
Miyagi |
Tohoku Univ. |
[Invited Talk]
Wireless system technologies and millimeter-wave device research Toshiaki Matsui, Issei Watanabe, Akira Endoh, Yoshimi Yamashita, Norio Onojima, Masataka Higashiwaki, Nobumitsu Hirose (NICT) ED2008-190 |
Millimeter-wave research and developments are now state necessity for expansion of radio spectrum resource. Recent wides... [more] |
ED2008-190 pp.33-34 |
ED, CPM, LQE |
2006-10-05 15:45 |
Kyoto |
|
Estimation of AlGaN/GaN HFET surface barrier height with Cat-CVD SiN passivation by XPS and C-V measurements Norio Onojima, Masataka Higashiwaki (NICT), Jun Suda, Tsunenobu Kimoto (Kyoto Univ.), Takashi Mimura (NICT/Fujitsu Lab.), Toshiaki Matsui (NICT) |
AlGaN surface barrier heights in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without SiN passiva... [more] |
ED2006-158 CPM2006-95 LQE2006-62 pp.35-38 |
LQE, ED, CPM |
2005-10-13 17:40 |
Shiga |
Ritsumeikan Univ. |
Short-gate AlGaN/GaN HFETs with extremely thin AlGaN barriers for millimeter-wave operations Masataka Higashiwaki, Norio Onojima, Toshiaki Matsui (NICT) |
[more] |
ED2005-138 CPM2005-125 LQE2005-65 pp.93-96 |